Transformations of the stepped Si(001) surface structure induced by heating the specimen by a current

Litvin, L. V.; Krasilnikov, A.B.; Латышев, А. В.

doi:10.1016/0039-6028(91)90483-9

Cited by 49 publications

(29 citation statements)

References 10 publications

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“…[7][8][9][10][11][12] Since the current and the drift are in the same direction, 13, 14 the results are consistent with the experiments. [1][2][3] In a one-dimensional step flow model, 12 the size of the bunches increases with time as t β with β ≈ 0.4, which roughly agrees with the experiment. 3 However, the growth rate with step-up drift is slower than that with step-down drift since terraces with fast diffusion along the current direction are dominant with step-down drift; this contradicts the experiment.…”

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confidence: 78%

“…When its vicinal face is tilted in the 110 direction, the terraces with dimer rows parallel to the steps, T A , and those with dimer rows perpendicular to the steps, T B , appear alternately. Since the surface diffusion along the dimer rows is faster than that across the dimer rows, the anisotropy of the surface diffusion changes alternately on consecutive terraces.On the vicinal face, two types of step instabilities, step wandering 1 and step bunching, [1][2][3] occur when a specimen is heated by direct electric current. The step wandering occurs with step-up current in a region of relatively large inclination (the tilting angle is 0.08…”

mentioning

confidence: 99%

“…On the vicinal face, two types of step instabilities, step wandering 1 and step bunching, [1][2][3] occur when a specimen is heated by direct electric current. The step wandering occurs with step-up current in a region of relatively large inclination (the tilting angle is 0.08 • ≤ θ ≤ 0.5 • ).…”

mentioning

confidence: 99%

“…1 Due to the step wandering, grooves perpendicular to the steps appear on the vicinal face. The step bunching [1][2][3] occurs irrespective of the current direction in the region of small inclination (θ ≤ 0.08 • ). The types of dominant terraces, which separate step bunches, are T B with stepdown current and T A with step-up current.…”

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confidence: 99%

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Effect of Two-Dimensionality on Step Bunching on a Si(001) Vicinal Face

2006

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We study the effect of two-dimensionality on step bunching on a Si(001) vicinal face heated by direct electric current. When the anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of adatoms.If the wandering fluctuation of step bunches is neglected as in the one-dimensional model, the bunching with step-down drift is faster than that with step-up drift in contradiction with experiment (Latyshev et al., Appl. Surf. Sci. 130-132, 139 (1998)). In a two-dimensional model with a wide system width, the step bunches wander heavily with step-up drift, and the recombination of neighboring bunches occur more frequently than those with step-down drift.The bunching with step-up drift is accelerated and can be faster than that with step-down drift. KEYWORDS:Step bunching, Step Wandering, Si (001) The Si(001) surface is reconstructed by the dimerization of surface atoms. When its vicinal face is tilted in the 110 direction, the terraces with dimer rows parallel to the steps, T A , and those with dimer rows perpendicular to the steps, T B , appear alternately. Since the surface diffusion along the dimer rows is faster than that across the dimer rows, the anisotropy of the surface diffusion changes alternately on consecutive terraces.On the vicinal face, two types of step instabilities, step wandering 1 and step bunching, [1][2][3] occur when a specimen is heated by direct electric current. The step wandering occurs with step-up current in a region of relatively large inclination (the tilting angle is 0.08Due to the step wandering, grooves perpendicular to the steps appear on the vicinal face. The step bunching 1-3 occurs irrespective of the current direction in the region of small inclination (θ ≤ 0.08 • ). The types of dominant terraces, which separate step bunches, are T B with stepdown current and T A with step-up current. The size of the bunches increases with time as t 1/2 , 3 which is independent of the drift direction. The growth rate of the bunches with stepdown current seems slightly slower than that with step-up current. 3The step instabilities are caused by drift of adatoms induced by the current. By taking account of the alternation of the anisotropic surface diffusion, the step instabilities are *

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confidence: 78%

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confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Effect of Two-Dimensionality on Step Bunching on a Si(001) Vicinal Face

2006

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“…When a Si(001) vicinal face is heated by direct electric current, the vicinal face is unstable and step bunching occurs irrespective of the current direction [1,2]. The type of large terraces between bunches is T A with stepdown current and T B with step-up current.…”

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Step Bunching with Alternation of Structural Parameters

et al. 2003

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By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs irrespective of the direction of the drift if the step distance is large. Like the bunching of permeable steps, the type of large terraces is determined by the drift direction. With step-down drift, step bunches grows faster than those with step-up drift. The ratio of the growth rates is larger than the ratio of the diffusion coefficients. Evaporation of adatoms, which does not cause the step bunching, decreases the difference. If only the alternation of kinetic coefficient is taken into account, the step bunching occurs with step-down drift. In an early stage, the initial fluctuation of the step distance determines the type of large terraces, but in a late stage, the type of large terraces is opposite to the case of alternating diffusion coefficient.

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Formation of Surface Patterns Observed with Reflection Electron Microscopy

Aseev

2012

In‐Situ Electron Microscopy

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Transformations of the stepped Si(001) surface structure induced by heating the specimen by a current

Cited by 49 publications

References 10 publications

Effect of Two-Dimensionality on Step Bunching on a Si(001) Vicinal Face

Effect of Two-Dimensionality on Step Bunching on a Si(001) Vicinal Face

Step Bunching with Alternation of Structural Parameters

Formation of Surface Patterns Observed with Reflection Electron Microscopy

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