Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

Abstract

Most of the detailed studies have been directed toward III–V semiconductors based type‐I and type‐II heterostructures. But, the transformations between type‐I and type‐II heterostructures have not been well studied so far. In this paper, it is reported that the proper doping in a specific region of well known type‐II InAs/AlSb nanoscale heterostructure can transforms it into the type‐I heterostructure. Moreover, this doping also improves the interband optical gain of the transformed type‐I heterostructure as compared to the original type‐II structure. The eight band k · p model based self‐consistent calculations have been performed to calculate the band structure and the carrier's wavefunctions. On the basis of outcomes from the calculations, it is reported that the optimized interband optical gain (within TM mode) of the transformed heterostructure is almost ten times as compared to the other heterostructures operating in mid‐infrared (MIR) region. Thus, the transformed heterostructure may be an important heterostructure made of InAs/AlSb material system for MIR wavelength region. Hence, the proper doping can transform type‐II heterostructure made of an optically inactive material system into type‐I structure, a very efficient optically active heterostructure (referred to as gain structure), which can provide technologically important MIR wavelength range.

Study of Nano-Hetrostructure of Type-Ii Compound Semiconductors:Their Electronic and Hole Wave Function Action in Mid Infrared Region

“…The researchers of the field of optoelectronics are paying attention on quantum well (QW) heterostructres as these structures have potential utilization in the field of infrared detectors, MIR spectroscopy, gas leakage sensing, optical data transferring, MIR emitters and monitoring of pollution [Ohno et al, 1992;Duggan and Ralph, 1987;Nirmal et al, 2015;Yadav et al, 2017;Alvi, 2017;Singh et al, 2017;Dolia et al, 2017]. These QW have a very remarkable role in tunable semiconductor lasers which have yield of 3-5μm.…”

A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

“…In reference [15], the optical gain and spontaneous emission characteristics of AlInN quantum well heterostructures for deep ultraviolet emitters have been discussed. D. Rosales et al [16] have reported an unusual temperature dependence of exciton lifetimes in arrays of GaN (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) oriented Al0.5Ga0.5N alloy by means of MBE (molecular beam epitaxy) technique. Moreover, Ngo et al [17] have studied photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaN/GaN heterostructures grown along the polar orientation.…”

“…Apart from the detailed study of type-I and type-II heterostructures, their transformations have also been studied. For example, in reference [18], P. A. Alvi has shown that the InAs/AlSb materials based heterostructure with type-II band alignment can be transformed into type-I heterostructure. Moreover, the transformed type-I heterostructure has found to exhibit improved optical gain.…”