Study of Nano-Hetrostructure of Type-Ii Compound Semiconductors:Their Electronic and Hole Wave Function Action in Mid Infrared Region

Abstract

A nano-hetrostructure of W shaped type-II compound semiconductor which have combination of layers made by AlSb, InAs and GaAsSb is studied for utilization in Lasing action of Mid Infrared Region (MIR). For this heterostructure, a multiband band k.p Hamiltonian has been simplified to compute the required carrier's wave functions, their subband structures and matrix dipole elements accountable for the probabilistic transitions which results into the high optical gain. For 2-D charge carrier density of 1.5 × 1012 cm − 2 , the computed results confirm that only the light hole (LH) subbands take part in optical transition in order to produce the high optical gain of the order of ~8850 /cm which corresponds to ~5.2 µm. Keeping in view its high optical gain at ~5.2 µm, the proposed type-II AlSb/InAs/GaAsSb heterostructure can be of use in the environmental monitoring, particularly important for sensing the CO2, CO and NO lethal gases available in the contaminated environment.