the active material between different conductive levels. [1] Thus far, wide range of semiconducting materials ranging from organic, inorganic, to the hybrid types has been documented in literature for fabrication of memristors. [1,2] Recent researches on memristors are focused on the polymer-based memories, especially constructed using blended composite layers of nanoparticles (NPs), carbon nanotubes, and small molecules with polymers. [3][4][5][6][7][8][9][10][11][12][13][14][15] Meanwhile, various kinds of resistive switching mechanisms have been proposed for these polymerbased memristors, such as the chargetransfer complex formation, donoracceptor couples system, redox activity, etc. [16] Particular attention is paid to the redox-based resistive switching memories consisting of metal-insulator-metal structure where the solid polymeric electrolytes (SPEs) exhibiting decent ionic conductive behavior were commonly used for this type of device because of their insulating nature in original form, as it allows ionic species transporting under applied voltage. Thanks to the ion conduction, the reduction reaction induced by the ionic species causes the accumulation of the cations; hence, a cathodic deposition reaction takes place to enable the formation of metallic filament. [17] In this regard, the ion source for the filament formation is mainly ascribable to the active electrode dissolution or the preexisting metal ions supported from the doped SPE for the redox-based memristors. That said, SPE can serve as a chelating agent consequent to the doping process and thus accommodate both free cations and anions.Among the exploited SPEs to date, poly(ethylene oxide) (PEO) has been the most prevailing one and is widely employed in many applications such as batteries, [18] memories, [19] and light emitting diodes (LEDs). [20] For example, Krishnan et al. have demonstrated high resistive switching ratios of 10 4 -10 6 for three different systems composed of pure PEO film sandwiched between silver (Ag)-platinum (Pt) electrodes, AgClO 4added PEO films between Ag-Pt electrodes, and AgClO 4 -added PEO films between two Ag electrodes, respectively. [21] Dendritelike filament growth was observed for the AgClO 4 -added PEO films sandwiched between Ag-Pt electrodes, as active electrode This study describes the first perovskite-based redox resistive switching memory using CH 3 NH 3 PbBr 3 nanoparticles (NPs) dispersed in an insulating solid polymer electrolyte, poly(ethylene oxide) (PEO), and scrutinizes it in detail. Herein, PEO is chosen not only to perform a matrix function due to its ionic conductivity but also to support a preservative material surrounding the CH 3 NH 3 PbBr 3 NPs to improve their stability. Further, it is revealed that PEO can serve as the chelating agent to coordinate with PbBr 2 /CH 3 NH 3 PbBr 3 NPs in consequence of the direct interaction between Pb 2+ cations and electron pairs of ether oxygen on the PEO chain to provide a host medium for the Pb 2+ cations on both amorphous and crystalline phases. Conseque...