Transfer of P-type to N-type Thermoelectric Properties of Ag-Sb-Te Thin Film Through Temperature Annealing and Its Electrical Power Generation

Prainetr, Natchanun; Vora–ud, Athorn; Horprathum, Mati; Muthitamongkol, Pennapa; Thaowonkaew, Somporn; Santhaveesuk, Theerapong; Phan, Thắng Bách; Seetawan, Tosawat

doi:10.1007/s11664-019-07756-9

Cited by 5 publications

(1 citation statement)

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“…Traditional thin films have usually employed different substrates such as hardrough Al 2 O 3 and SrTiO 3 , 5,6 hard-flat glass and SiO 2 , 7 and flexible-very flat polyimide. 8 Considering that flexible TE thin film is one of the new generations of TE technology, it holds potential in wearable applications. 9 [12][13][14] and demonstrated an interesting high ZT around 1.59 at 673 K 15 and 1.55 at 533 K. 16 Various magnetron sputtering methods are employed for controlling the microstructure and composition of TE thin films which eventually dictates the TE properties.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Ag-Doped Sb2Te3 Thin Films on SiO2 and Polyimide Substrates with Rapid Thermal Annealing

Thaowonkaew

Kumar²,

Vora–ud

2021

Journal of Elec Materi

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This work reports Ag-doped Sb 2 Te 3 (A-ST) thin films synthesized by DC magnetron sputtering method onto SiO 2 (SO) and polyimide (PI) substrates based on atomic composition optimization. The effect of post-depositional rapid thermal annealing on the crystallinity, morphology, composition, and thermoelectric properties of thin films was investigated. It was found that thin films on crystalline SO substrate yielded higher crystallinity and eventually a higher thermoelectric power factor in comparison to those grown on a polyimide substrate. The maximum room-temperature power factors achieved were 0.53 mW m À1 K À2 (PI) and 3.95 mW m À1 K À2 (SO).

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