We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.

We proposed a good calcinations condition of the ZnO disk to control the crystallography and nanoparticles in ZnO disk. The crystallography of precursor powder and disk powder were analyzed by the X-ray diffraction (XRD). The mean nanoparticles of ZnO disk was determinate by XRD results and observed by scanning electron microscope. The temperature ranges of 400℃ to 650℃ in air for 30 minutes were used calcinations ZnO disk. These temperature can be controlled the single phase, lattice parameters, unit cell volume, crystalline size, d-value, texture coefficient and bond lengths of Zn–Zn, Zn–O and O–O which correspond significantly the hexagonal crystal structure. The nanoparticles were small changed mean of 76.59 nm at the calcinations temperature range

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