Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

Xiong, Fangzhu; Guo, Weiling; Feng, Shiwei; Li, Xuan; Du, Zaifa; Wang, Le; Deng, Jun; Sun, Jie

doi:10.3390/ma12213533

Cited by 7 publications

(4 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In future work, we will continue to improve the quality of graphene and increase the sample size. We will apply the graphene in semiconductor devices, such as current spreading layers of light-emitting diodes [29]. We will also adjust the experimental conditions and explore the interesting topic, whether the GD method can produce vertical graphene [30] or carbon nanotubes.…”

Section: Discussionmentioning

confidence: 99%

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

et al. 2020

Self Cite

View full text Add to dashboard Cite

Arc discharge is traditionally used to synthesize randomly arranged graphene flakes. In this paper, we substantially modify it into a glow discharge method so that the discharge current is much more reduced. The H2 and/or Ar plasma etching of the graphitic electrode (used to ignite the plasma) is hence much gentler, rendering it possible to grow graphene in thin film format. During the growth at a few mbar, there is no external carbon gas precursor introduced. The carbon atoms and/or carbon containing particles as a result of the plasma etching are emitted in the chamber, some of which undergo gas phase scattering and deposit onto the metallic catalyst substrates (Cu-Ni alloy thin films or Cu foils) as graphene sheets. It is found that high quality monolayer graphene can be synthesized on Cu foil at 900 °C. On Cu-Ni, under the same growth condition, somewhat more bilayer regions are observed. It is observed that the material quality is almost indifferent to the gas ratios, which makes the optimization of the deposition process relatively easy. Detailed study on the deposition procedure and the material characterization have been carried out. This work reveals the possibility of producing thin film graphene by a gas discharge based process, not only from fundamental point of view, but it also provides an alternative technique other than standard chemical vapor deposition to synthesize graphene that is compatible with the semiconductor planar process. As the process uses solid graphite as a source material that is rich in the crust, it is a facile and relatively cheap method to obtain high quality graphene thin films in this respect.

show abstract

Section: Discussionmentioning

confidence: 99%

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Here, the plasma is used for the dissociation process of the carbon containing precursor. Using this approach, more industrially relevant substrates like quartz [8,9], sapphire [8,9], mica [8,10], SiO 2 [11,12], germanium [13] and gallium nitride (GaN) [14][15][16] have been used for the direct growth of graphene.…”

Section: Introductionmentioning

confidence: 99%

Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphere

et al. 2020

View full text Add to dashboard Cite

One of the bottlenecks in the implementation of graphene as a transparent electrode in modern opto-electronic devices is the need for complicated and damaging transfer processes of high-quality graphene sheets onto the desired target substrates. Here, we study the direct, plasma-enhanced chemical vapor deposition (PECVD) growth of graphene on GaN-based light-emitting diodes (LEDs). By replacing the commonly used hydrogen (H2) process gas with nitrogen (N2), we were able to suppress GaN surface decomposition while simultaneously enabling graphene deposition at <800 °C in a single-step growth process. Optimizing the methane (CH4) flow and varying the growth time between 0.5 h and 8 h, the electro-optical properties of the graphene layers could be tuned to sheet resistances as low as ∼1 kΩ/□ with a maximum transparency loss of ∼12%. The resulting high-quality graphene electrodes show an enhanced current spreading effect and an increase of the emission area by a factor of ∼8 in operating LEDs.

show abstract

“…GaN-based light emitting diodes (LEDs) and laser diodes (LDs) have made huge progress in recent years [ 1 , 2 , 3 ]. To further enhance the performance of optoelectronic devices, patterned sapphire substrates (PSSs) are widely used to strengthen the light extraction efficiency (LEE) and external quantum efficiency [ 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Gao

Peng

et al. 2020

Materials

View full text Add to dashboard Cite

The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs. (1) For 10 nm thin AlON sputtering, no AlON was detected on the cone sidewalls. Still, GaN nucleated preferably in non-(0001) orientation on these sidewalls. (2) If the thickness of the sputtered AlON NL was 25 nm, AlON formed on the cone sidewalls and flat regions, and some small GaN crystals formed near the bottom of the cones. (3) If the sputtered AlON was 40 nm, the migration ability of Ga atoms would be enhanced, and GaN nucleated at the top of the cones, which have more chances to grow and generate more dislocations. Finally, the GaN growth mechanisms on PSSs with sputtered AlON NLs of different thicknesses were proposed.

show abstract

Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

Cited by 7 publications

References 30 publications

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphere

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Contact Info

Product

Resources

About

Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

Cited by 7 publications

References 30 publications

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N2 atmosphere

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Contact Info

Product

Resources

About

Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphere