2022
DOI: 10.1021/acsami.2c16505
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Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication

Abstract: Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (>1000 °C), which can damage the substrates. Here, a growth method for high-quality large-area graphene at 300 °C is introduced. A multizone furnace with gradient temperature control was designed according to a computational fluid dynamics model. The crucial roles of the chamber… Show more

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Cited by 5 publications
(2 citation statements)
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“…[42] Recently, Sun et al introduced an innovative approach involving a multi-zone furnace with gradient temperature control, utilizing methane as a precursor. [43] Notably, this methodology achieved wafer-scale graphene film growth at 300 °C, marking a significant advancement in the field. Additional experimental evidence regarding low-temperature CVD growth of graphene is compiled in Table S1 (Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…[42] Recently, Sun et al introduced an innovative approach involving a multi-zone furnace with gradient temperature control, utilizing methane as a precursor. [43] Notably, this methodology achieved wafer-scale graphene film growth at 300 °C, marking a significant advancement in the field. Additional experimental evidence regarding low-temperature CVD growth of graphene is compiled in Table S1 (Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…[43,50] Meanwhile, advancements in the techniques used to transfer graphene also aid in the creation of effective and dependable graphene devices. By using cuttingedge heterogeneous integration techniques, such as wafer-scale growth of 2D materials directly onto target substrates, [51,52] the occurrence of surface defects (like the residual aggregates, contamination, wrinkles, and cracks during the transfer process) is circumvented, thereby greatly preventing the scattering losses. In this way, the non-saturable fraction of the graphene absorption can be reduced.…”
Section: Nonlinear Response Of the Ultra-thin Silicon/graphene Hybrid...mentioning
confidence: 99%