Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Alshebly, Wisam; Shalchian, Majid; Shafizade, Danial; Chalechale, Amirali; Jazaeri, Farzan

doi:10.1016/j.sse.2022.108544

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…and flat transconductance-drain current curve. Although the gm1 will be significantly reduced by the curve flattening [ 20 ].…”

Section: Performance Metrics For Linearity and Intermodulation Parametermentioning

confidence: 99%

“…Therefore, making it easier to fabricate as compared to MOSFETs. However, these devices exhibit superior electrical properties, low leakage current, excellent short-channel behavior, simplified fabrication flow, low thermal budget, and lesser variability as compared to MOSFET [ [19] , [20] , [21] , [22] , [23] ]. However, they suffer from issues like low ON current and hence low transconductance due to the very high doping and low mobility when matched up with conventional MOSFET.…”

Section: Introductionmentioning

confidence: 99%

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Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Awadhiya,

Ratnakumar,

Kumar

et al. 2024

Heliyon

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“…and flat transconductance-drain current curve. Although the gm1 will be significantly reduced by the curve flattening [ 20 ].…”

Section: Performance Metrics For Linearity and Intermodulation Parametermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Awadhiya,

Ratnakumar,

Kumar

et al. 2024

Heliyon

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“…A abordagem adotada resulta em expressões precisas, analíticas e explícitas, sendo bastante adequada para integrar simuladores de circuitos integrados. Trabalhos similares foram apresentados por Farzan Jazaeri et al [76], [86], [90], [96], [98], incluindo efeitos quânticos e armadilhas de interface, e pelos colaboradores de Benjamín Iñiguez [81], [82], [91], incluindo efeitos de canal curto. Entretanto, nenhum desses modelos se concentra em obter um tratamento totalmente analítico e explícito.…”

Section: -Breve Revisão Da Literaturaunclassified

Modelagem compacta para transistores MOS: nanofios sem junções e canais bidimensionais

Souza

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Facing the imminent saturation of Moore's Law, the academic community has been exploring alternatives to the conventional silicon MOSFET, either by innovating on the operating principles of transistors or by adopting newly discovered materials. In this context, this thesis provides an in-depth analysis and proposes a compact modeling approach for two emerging nanodevices: Junctionless Nanowire Field-Effect Transistors (JLNWFETs) and Field-Effect Transistors based on Two-Dimensional Materials (2DFETs).In the first part of the thesis, a detailed investigation of JLNWFETs is conducted, spanning from operational principles to a meticulous analysis of their operating regimes and specific characteristics. Subsequently, a compact modeling approach is proposed for cylindrical JLNWFETs, centered on the intuitive description of the device as a resistor whose resistivity is controlled by the gate contact. Including short-channel effects and other non-idealities, fully analytical and explicit expressions are derived to describe the charge, capacitance, and electric current characteristics of these transistors.The second part of this work explores 2DFETs, highlighting the fundamental properties of two-dimensional semiconductors and the unique characteristics they bring to nanoelectronics. Initially, a critical analysis of the state-of-the-art and future prospects for adopting these emerging transistors is conducted. Subsequently, compact models are developed for the electric current characteristics of 2DFETs, covering carrier transport from diffusion-drift to ballistic limits and incorporating various non-idealities.

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Analytical Model for Cylindrical Junctionless Nanowire FETs

de Souza,

Celino,

Ragi

et al. 2024

2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS)

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Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Cited by 3 publications

References 14 publications

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Modelagem compacta para transistores MOS: nanofios sem junções e canais bidimensionais

Analytical Model for Cylindrical Junctionless Nanowire FETs

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