Tracks of high energy heavy ions in solids

Furuno, S.; Otsu, Hiroshi; Hojou, K.; Izui, K.

doi:10.1016/0168-583x(95)00813-6

Cited by 95 publications

(38 citation statements)

References 8 publications

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“…MD yielded no evidence of crystallization within the ion track upon resolidification, consistent with XTEM observations. Both results contradict those of Furuno et al [9] potentially due to the influence of the free surface in Ref. [9].…”

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confidence: 56%

“…Both results contradict those of Furuno et al [9] potentially due to the influence of the free surface in Ref. [9]. Across the void, formation begins in the vapor phase (10 ps) but evolves fully in the liquid phase (> 25 ps).…”

contrasting

confidence: 56%

“…A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten ion track is no longer completely surrounded by an amorphous matrix.…”

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Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. DOI: 10.1103/PhysRevLett.110.245502 PACS numbers: 61.80.Jh, 61.43.Dq, 61.43.Bn, 61.05.cf Swift heavy-ion irradiation (SHII) has many applications, spanning geochronological dating [1] to nanostructure fabrication [2]. Though this approach has found industrial application [3], the fundamental nature of ionsolid interactions at very high ion energies remains poorly understood. Such interactions are dominated by inelastic processes (electronic stopping) resulting in the excitation and ionization of substrate atoms while, in contrast, the elastic processes (nuclear stopping) that lead to ballistic atomic displacements at much lower energies are negligible in the SHII regime. The efficiency with which energy deposited in the electronic subsystem is subsequently transferred to the lattice is governed by the electronphonon coupling parameter g where typically g amorphous > g crystalline due to a reduced electron mean free path in the former. When the lattice temperature exceeds that required for melting, a narrow cylinder of molten material is formed along the ion path. The ensuing rapid resolidification of this transient liquid phase can yield remnant structural modifications within the substrate in the form of an ion track.Crystalline Ge (c-Ge) is relatively insensitive to SHII such that ion-track production necessitates very high electronic stopping S e values. Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al. [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten i...

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Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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“…The molten ion track, however, appears to fully recrystallize upon cooling, indicating that melting cannot be the only criterion for ion track formation in c-Si. Ion track formation in polycrystalline Si has been reported by Furuno et al;9 however, the irradiation was performed on 5-nm thin evaporated layers, and the nature of the ion tracks was not determined.…”

Section: Introductionmentioning

confidence: 99%

Latent ion tracks in amorphous silicon

et al. 2013

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We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

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“…Arguments in favor of and against the applicability of both the models in various systems have been given in the literature (Miotello and Kelly, 1997). Modiÿca-tions of these models to extend their applicability to speciÿc systems have also been attempted (Furuno et al, 1996).…”

Section: Introductionmentioning

confidence: 99%