2010
DOI: 10.1103/physrevlett.105.067206
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Tracking Random Walk of Individual Domain Walls in Cylindrical Nanomagnets with Resistance Noise

Abstract: The stochasticity of domain wall (DW) motion in magnetic nanowires has been probed by measuring slow fluctuations, or noise, in electrical resistance at small magnetic fields. By controlled injection of DWs into isolated cylindrical nanowires of nickel, we have been able to track the motion of the DWs between the electrical leads by discrete steps in the resistance. Closer inspection of the time-dependence of noise reveals a diffusive random walk of the DWs with an universal kinetic exponent. Our experiments o… Show more

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Cited by 25 publications
(26 citation statements)
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“…The study of MDW avalanches has become relevant in the field of memory devices [2][3][4], nanowires [5][6][7][8], and metal, alloy or semiconductor thin-films [9][10][11][12]. When ferromagnetic (or ferroelectric) thin-films with quenched disorder are placed in an external magnetic (or electric) field, a rich phenomenology is observed through the study of dynamic properties in the criticality [13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…The study of MDW avalanches has become relevant in the field of memory devices [2][3][4], nanowires [5][6][7][8], and metal, alloy or semiconductor thin-films [9][10][11][12]. When ferromagnetic (or ferroelectric) thin-films with quenched disorder are placed in an external magnetic (or electric) field, a rich phenomenology is observed through the study of dynamic properties in the criticality [13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Similar techniques have already shown promise in magnetic field driven DW systems 17 . This method should make it more feasible to utilize DW dynamics for device applications.…”
mentioning
confidence: 97%
“…The different attempt frequencies observed for the two types of nanocluster arrangements may then be attributed to differences in the domain-wall character or the propagation path through the cluster arrangement. But pinning at defects and geometrical pinning sites, which strongly influence the dynamic behavior of magnetic domains [52][53][54], or the formation of more than one single magnetic domain [16,55] may also be responsible for the increased attempt frequencies extracted by our simple model based only on three domains. In particular, when considering the shape of the bent nanocluster with two large magnetic domains oriented in a relative angle of 60…”
Section: Modelling and Analysis Of The Magnetization Fluctuationsmentioning
confidence: 96%