Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana; Zurbuchen, M. A.; He, Liang; McKay, Jeff; Lin, Qiyin; Goorsky, Mark S.; Lake, Roger K.; Wang, Kang L.

doi:10.1002/adfm.201400960

Cited by 120 publications

(129 citation statements)

References 40 publications

(40 reference statements)

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“…[1][2][3][4] In addition, 2D materials such as graphene, boron nitride nanosheets, and layered transition metal dichalcogenides (TMDs) were investigated as potential buffer layers for the epitaxial growth of III-V semiconductors on foreign substrates. [5][6][7][8] The use of TMDs, in particular, layered-MoS 2 as a buffer layer attracts the potential interest of researchers to address the issues such as large lattice and thermal expansion mismatch for the growth of GaN. 9,10 Recently, GaN epitaxy on layered-MoS 2 flakes was demonstrated using high temperature ($1000 C) growth process of metal-organic chemical vapor deposition (MOCVD).…”

Section: Impact Of N-plasma and Ga-irradiation On Mos 2 Layer In Molementioning

confidence: 99%

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Mishra

Tangi

et al. 2017

Applied Physics Letters

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Recent interest in two-dimensional materials has resulted in ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma (N2*) and gallium (Ga) irradiation studies are employed to understand the individual effect on the doping levels of ML-MoS2, which is evaluated by micro-Raman and high-resolution X-Ray photoelectron spectroscopy (HRXPS) measurements. With both methods, p-type doping was attained and was verified by softening and strengthening of characteristics phonon modes E2g1 and A1g from Raman spectroscopy. With adequate N2*-irradiation (3 min), respective shift of 1.79 cm−1 for A1g and 1.11 cm−1 for E2g1 are obtained while short term Ga-irradiated (30 s) exhibits the shift of 1.51 cm−1 for A1g and 0.93 cm−1 for E2g1. Moreover, in HRXPS valence band spectra analysis, the position of valence band maximum measured with respect to the Fermi level is determined to evaluate the type of doping levels in ML-MoS2. The observed values of valance band maximum are reduced to 0.5, and 0.2 eV from the intrinsic value of ≈1.0 eV for N2*- and Ga-irradiated MoS2 layers, which confirms the p-type doping of ML-MoS2. Further p-type doping is verified by Hall effect measurements. Thus, by GaN overgrowth, we attained the building block of intrinsic GaN/p-type MoS2 heterojunction. Through this work, we have provided the platform for the realization of dissimilar heterostructure via monolithic approach.

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Section: Impact Of N-plasma and Ga-irradiation On Mos 2 Layer In Molementioning

confidence: 99%

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Mishra

Tangi

et al. 2017

Applied Physics Letters

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“…For h-BN, the 2s, 2p orbitals of B and N are treated as valence. Calculation details for the adsorption energy and the Ga, Al, As and In pseudo-potentials used have been detailed in our previous study of adsorption energy of these elements on graphene [12]. Our prior studies of Al, Ga, As and In adsorption on graphene have shown that each element binds with approximately the same binding energy on to single layer and bilayer graphene; the favored binding site on the honeycomb lattice of graphene is unique to each element.…”

Section: Alternative Qvdwe Buffer Layer Materialsmentioning

confidence: 99%

“…Despite an ultrasmooth morphology of such GaAs films, the low adsorption and migration energies of gallium and arsenic atoms on graphene result in cluster-growth mode during crystallization of GaAs films at an elevated temperature. Details on the growth process and the associated physics can be found elsewhere [12].…”

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

Alaskar

Arafin

Lin

et al. 2015

Journal of Crystal Growth

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a b s t r a c tA novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (θ-2θ scan, ω-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.

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“…w-GaN (001) [64] 1970 w-AlN (001) [65] 5840 h-BN (001) [66] ≈37-57 (cubic BN) graphene (001) [67] 52 (multilayer) α-Ti (001) [68] 2048 glass [69] 2000-4000…”

Section: Progress Reportmentioning

confidence: 99%

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

Choi

Kim

Liu

et al. 2015

Advanced Optical Materials

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There have been significant recent developments in the growth of single‐crystal gallium nitride (GaN) on unconventional templates for large‐area blue or green light‐emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single‐crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer‐transfer onto foreign substrates. Recent progress in low‐temperature GaN‐based red–green–blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer‐transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer‐transfer technologies are expected to lead to new lighting and display devices with high efficiency and full‐color tunability, which are suitable for large‐area, stretchable display and lighting applications.

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Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Cited by 120 publications

References 40 publications

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

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