Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Mishra, Pawan; Tangi, Malleswararao; Ng, Tien Khee; Hedhili, Mohamed N.; Anjum, Dalaver H.; Alias, Mohd Sharizal; Tseng, Chien-Chao; Li, Lain‐Jong; Ooi, Boon S.

doi:10.1063/1.4973371

Cited by 43 publications

(34 citation statements)

References 36 publications

(45 reference statements)

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“…43 However, our previous reports show the enormous quenching (100-150 times) of PL for nitrogen plasma irradiated MoS 2 layers and 2D/3D heterojunctions. 16,23 In this study, we preserved the PL signal of the QW with relatively high intensity (quenched by 5 times) and a comparable peak width of 70 meV by using the low nitrogen flow rate and low forward power of plasma source for the growth of In 0. 15 The blue shift in PL spectra with respect to the MoS 2 single layer confirmed that the MoS 2 well exhibits the quantum confinement effect.…”

Section: -mentioning

confidence: 91%

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Tangi

Mishra

et al. 2017

Applied Physics Letters

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The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.

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Section: -mentioning

confidence: 91%

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Tangi

Mishra

et al. 2017

Applied Physics Letters

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“…Raman spectraof pristine and N * 2 -irradiated MoS 2 mono-layers [98]. Reprinted from Reference [98], with the permission of AIP Publishing. Figure 23 and the inset, the PL intensity increased with increasing plasma irradiation time.…”

Section: Plasma Irradiationmentioning

confidence: 99%

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

et al. 2019

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Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

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“…For instance, thermal annealing induces intermediate defect states while the thermodynamically non-equilibrium growth processes result in unintentional defects [10,12]. Due to the Li intercalation and the exposure of high energetic N-plasma radicals to the MoS 2 layer, a structural phase change from the thermodynamically most favorable form of trigonal prismatic 2H-MoS 2 to a metastable octahedral 1T-MoS 2 takes place which results in an enormous quenching of photoluminescence intensity [7,13,14]. In contrast, the intrinsic and extrinsic point defects significantly enhance the PL intensity of 2D single layer MoS 2 owing to the stronger interaction of excitons with the localized states [10,11].…”

Section: Introductionmentioning

confidence: 99%

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

Tangi¹,

Shakfa²,

Mishra³

et al. 2017

Opt. Mater. Express

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Abstract:We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS 2 . For this study, MoS 2 layers were chemical vapor deposited on molecular beam epitaxial grown In 0.15 Al 0.85 N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS 2 , a thin In 0.15 Al 0.85 N cap layer was deposited on the MoS 2 /In 0.15 Al 0.85 N heterostructure. We confirm that the sandwiched MoS 2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS 2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 -400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS 2 . References and links1. H. J. Queisser and E. E. Haller, "Defects in semiconductors: some fatal, some vital," Science 281(5379), 945-950 (1998). 2. S. Nakamura, "The Roles of Structural Imperfections in InGaN-based Blue Light-Emitting Diodes and Laser Diodes," Science 281(5379), 956-961 (1998). 3. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS 2 transistors," Nat.Nanotechnol. 6(3), 147-150 (2011). Dadap, I. P. Herman, P. Sutter, J. Hone, and R. M. Osgood, Jr., "Direct measurement of the thickness-dependent electronic band structure of MoS 2 using angle-resolved photoemission spectroscopy," Phys.

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Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Cited by 43 publications

References 36 publications

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

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