Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric

Gao, Rui; Liu, Chang; He, Zhiyuan; Chen, Yiqiang; Shi, Yijun; Lin, Xiaoling; Zhang, Xiaowen; Wang, Zhizhe; En, Yunfei; Lu, Guoguang; Huang, Yun

doi:10.1109/led.2021.3049245

Cited by 10 publications

(6 citation statements)

References 15 publications

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“…Notably, the planar gate structure SiC MOSFET exhibited the largest negative drift in threshold voltage, while the dual gate groove structure SiC MOSFET demonstrated the largest change in g m_max . As mentioned in [ 18 , 19 , 20 , 21 , 44 ], hydrogen molecules can dissociate into hydrogen atoms under Au catalysis. Then, the hydrogen atoms can lose an electron due to the attraction of the Si nucleus, eventually forming H+ ions.…”

Section: Resultsmentioning

confidence: 99%

The Influence of Special Environments on SiC MOSFETs

Li,

Jiang,

et al. 2023

Materials

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In this work, the influences of special environments (hydrogen gas and high temperature, high humidity environments) on the performance of three types of SiC MOSFETs are investigated. The results reveal several noteworthy observations. Firstly, after 500 h in a hydrogen gas environment, all the SiC MOSFETs exhibited a negative drift in threshold voltage, accompanied by an increase in maximum transconductance and drain current (@ VGS/VDS = 13 V/3 V). This phenomenon can be attributed to that the hydrogen atoms can increase the positive fixed charges in the oxide and increase the electron mobility in the channel. In addition, high temperature did not intensify the impact of hydrogen on the devices and electron mobility. Instead, prolonged exposure to high temperatures may induce stress on the SiO2/SiC interface, leading to a decrease in electron mobility, subsequently reducing the transconductance and drain current (@ VGS/VDS = 13 V/3 V). The high temperature, high humidity environment can cause a certain negative drift in the devices’ threshold voltage. With the increasing duration of the experiment, the maximum transconductance and drain current (@ VGS/VDS = 18V (20 V)/3 V) gradually decreased. This may be because the presence of moisture can lead to corrosion of the devices’ metal contacts and interconnects, which can increase the devices’ resistance and lead to a decrease in the devices’ maximum transconductance and drain current.

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Section: Resultsmentioning

confidence: 99%

The Influence of Special Environments on SiC MOSFETs

Li,

Jiang,

et al. 2023

Materials

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“…It combines with the traps at the border of the SiNx dielectric layer, the AlGaN barrier layer, and the GaN buffer layer; passivates the hanging bond and the interface state; and then reduces the traps inside the device. Frequency (Hz) Frequency (Hz) The defect density of the border trap is extracted according to the tunneling theoretical model [11,[28][29][30]. The power spectral density Svbf of flat band voltage noise and the drain current Ids have the following equation relationship:…”

Section: The Influence Of Hydrogen Effect On Border Traps In Gan Devicesmentioning

confidence: 99%

“…Theoretically, the drift of V TH may arise from border traps inside the bulk SiN x , traps at the SiN x /AlGaN interface, and trap states in the AlGaN/GaN interface and AlGaN barrier. On the one hand, devices with in situ SiN x have better quality and interfaces; On the other hand, the trap density at the amorphous SiN x /AlGaN interface is much higher than the density at the AlGaN/GaN interface; that is, the defects at the AlGaN/GaN interface do not significantly contribute to the V TH drift [11][12][13]. We therefore propose a guess: the border trap inside SiN x and the interface trap of SiN x /AlGaN have a significant impact on the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

“…However, by reviewing the relevant literature, it was found that due to the lack of corresponding characterization techniques, it is difficult to distinguish the influence of amorphous SiN x /AlGaN interface trap and border trap on the experiment [5,6,14]. The previous experimental research only describes the interaction between electrons and general interface states, without considering the influence of border traps in gate media [5,6,11]. On this basis, the content of this article mainly focuses on the reliability of hydrogen effects in D-mode GaN HEMT devices at different experimental temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Zhao,

He,

et al. 2024

Micromachines

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In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiNx gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temperature, the threshold voltage VTH of the original device was positively shifted from −16.98 V to −11.53 V, and the positive bias of threshold was 5.45 V. When the VDS was swept from 0 to 1 V with VGS of 0 V, the IDS was reduced by 25% from 9.45 A to 7.08 A. (2) Another group of original devices with identical electrical performance, after the same duration of hydrogen treatment at 100 °C, exhibited a reverse shift in threshold voltage with a negative threshold shift of −0.91 V. The output characteristics were enhanced, and the saturation leakage current was increased. (3) The C-V method and the low-frequency noise method were used to investigate the effect of hydrogen effect on the device interface trap and border trap, respectively. It was found that high-temperature hydrogen conditions can passivate the interface/border traps of SiNx/AlGaN, reducing the density of interface/border traps and mitigating the trap capture effect. However, in the room-temperature hydrogen experiment, the concentration of interface/border traps increased. The research findings in this paper provide valuable references for the design and application of depletion-mode AlGaN/GaN HEMT devices.

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“…Then, GaN-based hydrogen sensors were manufactured and demonstrated favorable hydrogen sensitivity [9][10][11]. In recent years, the impact of hydrogen on the reliability of GaN devices has become a new concern [12][13][14][15]. The hydrogen in GaN devices mainly comes from the process of material preparation and package assembly.…”

Section: Introductionmentioning

confidence: 99%

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

Zhou,

Liu,

Guo

et al. 2024

Micromachines

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In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-temperature storage can effectively reduce the impact of hydrogen on the devices. After hydrogen treatment, the output current and the maximum transconductance of the device increase, and the threshold voltage drifts negatively. However, after high-temperature treatment at 200 °C for 24 h, the output current, threshold voltage, and the maximum transconductance of the device all approach their initial values before hydrogen treatment. By using low-frequency noise analysis technology, the trap density of the hydrogen-treated AlGaN/GaN HEMT is determined to be 8.9 × 1023 cm−3·eV−1, while it changes to 4.46 × 1022 cm−3·eV−1 after high-temperature storage. We believe that the change in the electrical characteristics of the device in hydrogen is due to the passivation of hydrogen on the inherent trap of the device, and the variation in the electrical properties of the device in the process of high-temperature storage involves the influence of two effects, namely the dehydrogenation effect and the improvement of the metal–semiconductor interface caused by high temperatures.

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Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric

Cited by 10 publications

References 15 publications

The Influence of Special Environments on SiC MOSFETs

The Influence of Special Environments on SiC MOSFETs

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

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