Towards See‐Through Displays: Fully Transparent Thin‐Film Transistors Driving Transparent Organic Light‐Emitting Diodes

Görrn, Patrick; Sander, Michelle Y.; Meyer, Jens; Kröger, Michael; Becker, E.; Johannes, Hans‐Hermann; Kowalsky, Wolfgang; Riedl, Thomas

doi:10.1002/adma.200501957

Cited by 306 publications

(169 citation statements)

References 27 publications

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“…Canon also demonstrated OLED pixel driving at a frame rate of 120 Hz [18]. A group from the Braunschweig University of Technology in Germany demonstrated operation of transparent OLED pixels using a-Zn-Sn-O (a-ZTO) TFTs [19]. Flexible integrated circuits have also been studied, and were fi rst reported as fl exible fi ve-stage ring oscillators based on a-IGZO TFTs by a group from the National Taiwan University [20].…”

Section: Active-matrix Displays and Circuits Based On Aos Tft Arraysmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Active-matrix Displays and Circuits Based On Aos Tft Arraysmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Transparent OLEDs incorporate semi-transparent contacts [Görrn et al 2006], providing an ideal architecture for multilayer pre-filtering. However, such displays do not support binocular correction.…”

Section: Multilayer Oledsmentioning

confidence: 99%

Correcting for optical aberrations using multilayer displays

et al. 2012

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f r o n t l a y e r r e a r l a y e r wa t c h f a c e c o r r e c t e d f o r p r e s b y o p i a c o n v e n t i o n a l d i s p l a y s i n g l e -l a y e r p r e -f i l t e r i n g t wo -l a y e r p r e -f i l t e r i n g p e r c e i v e d i ma g e s d i s p l a y e d i ma g e sFigure 1: Correcting presbyopia using multilayer displays. A presbyopic individual observes a watch at a distance of 45 cm. The watch appears out of focus due to the limited range of accommodation. To read the watch, corrective eyewear (e.g., bifocals) must be worn with a +2.50 diopter spherical lens. (Left) As a substitute for eyewear, the watch can be modified to use a multilayer display containing two semi-transparent, light-emitting panels. The images displayed on these layers are pre-filtered such that the watch face appears in focus when viewed by the defocused eye. (Right) From left to right along the bottom row: the perceived image using a conventional display (e.g., an unmodified LCD), using prior single-layer pre-filtering methods, and using the proposed multilayer pre-filtering method. Corresponding images of the watch face are shown along the top row. Two-layer pre-filtering, while increasing the watch thickness by 6 mm, enhances contrast and eliminates ringing artifacts, as compared to prior single-layer pre-filtering methods. (Watch image c Timex Group USA, Inc.) AbstractOptical aberrations of the human eye are currently corrected using eyeglasses, contact lenses, or surgery. We describe a fourth option: modifying the composition of displayed content such that the perceived image appears in focus, after passing through an eye with known optical defects. Prior approaches synthesize pre-filtered images by deconvolving the content by the point spread function of the aberrated eye. Such methods have not led to practical applications, due to severely reduced contrast and ringing artifacts. We address these limitations by introducing multilayer pre-filtering, implemented using stacks of semi-transparent, light-emitting layers. By optimizing the layer positions and the partition of spatial frequencies between layers, contrast is improved and ringing artifacts are eliminated. We assess design constraints for multilayer displays; autostereoscopic light field displays are identified as a preferred, thin form factor architecture, allowing synthetic layers to be displaced in response to viewer movement and refractive errors. We assess the benefits of multilayer pre-filtering versus prior light field pre-distortion methods, showing pre-filtering works within the constraints of current display resolutions. We conclude by analyzing benefits and limitations using a prototype multilayer LCD.

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“…Amorphous oxide semiconductors such as In-Ga-Zn-O, [1][2][3][4] In-Zn-O, 5,6 Zn-Sn-O, [7][8][9][10] In-Sn-O, 11 and In-Zn-Sn-O 12,13 have attracted considerable attention as channel materials for next-generation thin-film transistors (TFTs). Compared with crystalline materials, amorphous oxide materials have advantages because of their low processing temperatures and uniformity of device characteristics.…”

Section: Introductionmentioning

confidence: 99%

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

Umeda

Miyasako

Sugiyama

et al. 2013

Journal of Applied Physics

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Ultraviolet–ozone (UV/O3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO4. By applying UV/O3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO4 films. As a result, high TFT performance, with values of on/off ratio, 108; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm2 V−1 s−1, was achieved.

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Towards See‐Through Displays: Fully Transparent Thin‐Film Transistors Driving Transparent Organic Light‐Emitting Diodes

Cited by 306 publications

References 27 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Correcting for optical aberrations using multilayer displays

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

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