2014
DOI: 10.1016/j.orgel.2014.02.008
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Towards reliable charge-mobility benchmark measurements for organic semiconductors

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Cited by 251 publications
(235 citation statements)
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“…JV characteristics indicate the PFI-modifi ed HILs do not consistently nor signifi cantly improve the hole current density (Figure 6 b). The simulated ohmic JV characteristics are shown as a gray line, for a bare potential of 2.0 V, and µ SCLC = 2 × 10 −4 cm 2 V −1 s −1 taken from the work of Blakesley et al [ 50 ] The measured JV characteristics clearly fall well below the ohmic characteristic at turn-on (i.e., very high contact resistance there), approaching it only at high drive voltages.…”
Section: Resultsmentioning
confidence: 94%
“…JV characteristics indicate the PFI-modifi ed HILs do not consistently nor signifi cantly improve the hole current density (Figure 6 b). The simulated ohmic JV characteristics are shown as a gray line, for a bare potential of 2.0 V, and µ SCLC = 2 × 10 −4 cm 2 V −1 s −1 taken from the work of Blakesley et al [ 50 ] The measured JV characteristics clearly fall well below the ohmic characteristic at turn-on (i.e., very high contact resistance there), approaching it only at high drive voltages.…”
Section: Resultsmentioning
confidence: 94%
“…In order to correct for the built-in voltage, an effective applied voltage V eff ¼ V-V bi , where the V bi is used as a fitting parameter in the MG law (or other analytical equations of variant types, such as the MH equation or the Murgatroyd equation [30]), is commonly used [31,32]. This indirect approach is, however, rather uncertain, since the band diagram at V ¼ 0 V for a symmetric device and V ¼ V bi for an asymmetric device are not necessarily similar.…”
Section: Built-in Voltagesmentioning
confidence: 99%
“…[5] However, fullerene derivatives have intrinsic shortcomings, such as high cost of synthesis, low absorption coefficients in the visible spectral region, limited variability in energy level, and morphological instability in the blended films. [6] The development of new electron acceptors which overcome the drawbacks associated with fullerene-based acceptors is thus vital for further advancing OSCs. [7] Encouragingly, several studies have reported BHJ solar cells with PCEs >8% based on non-fullerene acceptors.…”
mentioning
confidence: 99%