2015
DOI: 10.1002/adfm.201500784
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Perfluorinated Ionomer‐Modified Hole‐Injection Layers: Ultrahigh‐Workfunction but Nonohmic Contacts

Abstract: Recently it has been reported that Nafion oligomers, i.e., 2‐(2‐sulfonatotetrafluoroethoxy)‐2‐trifluoromethyltrifluoroethoxyfunctionalized oligotetrafluoroethylenes, also called perfluorinated ionomers (PFIs), can be blended into poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDT:PSSH) films to increase their workfunctions beyond 5.2 eV. These PFI‐modified films are useful for energy‐level alignment studies, and have been proposed as hole‐injection layers (HILs). It is shown here however that th… Show more

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Cited by 24 publications
(18 citation statements)
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“…Doped polymeric materials that form Ohmic contacts have been studied recently in the context of conventional semiconductors . But, solution‐processed polymeric contacts have not been used in 2D semiconductors until now.…”
Section: Introductionmentioning
confidence: 99%
“…Doped polymeric materials that form Ohmic contacts have been studied recently in the context of conventional semiconductors . But, solution‐processed polymeric contacts have not been used in 2D semiconductors until now.…”
Section: Introductionmentioning
confidence: 99%
“…Although the vacuum workfunctions ϕ of these polymers are high, ≈5.2 eV, they are still not high enough to furnish ohmic hole contacts to organic semiconductors (OSCs) with ionization potentials I p ≳5.4 eV, many of which are of great technological interest 4 5 . Although the insertion of an insulating dipolar surface layer with the correct polarity can tune ϕ 6 7 , the attendant increase in kinetic barrier for charge injection ultimately limits its usefulness 8 9 .…”
mentioning
confidence: 99%
“…They offer us another choice to seek multifunctional materials, which are effective both in blocking nonradiative current losses and facilitating charge injection. Perfluorinated ionomer (PFI) was reported to incorporate between hole‐transporting layer and perovskite emitter to increase the valence band maximum of HTL . Rogach's group employed a thin film of PFI (5 nm) into CsPbBr 3 green LEDs, and pulled down the hole injection barrier from 1.09 to 0.75 eV (Figure e,f) .…”
Section: Film Formation Of Perovskites' Emitting Layermentioning
confidence: 99%