Towards Realizing the Low-Coercive Field Operation of Sputtered Ferroelectric ScxAl1-xN

Gund, Ved; Davaji, Benyamin; Lee, Hyunjea; Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep; Lal, Amit

doi:10.1109/transducers50396.2021.9495515

Cited by 15 publications

(4 citation statements)

References 14 publications

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“…Empirically, adjusting E c can be effectively achieved by altering the thickness of the thin film. So, we have summarized recent research on the thickness of AlScN films [ 23 , 34 , 36 , 43 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 , 68 ], as depicted in Figure 1 c. Such research of thickness reveals a significant downward trend, while the corresponding Sc components gradually concentrate around 0.3. In 2023, it appears to represent a new milestone, with thickness even dropping below 5 nm.…”

Section: Materials Properties and Preparation Processesmentioning

confidence: 99%

“…Gund et al provided a structural discussion and reported vertical and lateral MFM-structured AlScN-based ferroelectric capacitors in 2021. Molybdenum (Mo) and Al were used as the bottom electrode and top electrode, respectively [ 54 ]. The results indicated that the lateral structure capacitor appeared to have a smaller leakage current, and they attributed this to the number of barrier crossings by the current.…”

Section: Applications In Advanced Memory Devicesmentioning

confidence: 99%

“…Copyright 2021, AIP Publishing. ( c ) Research trends in AlScN film thickness in recent years [ 23 , 34 , 36 , 43 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 , 68 ]. ( d ) The cross-sectional TEM image of Al/AlScN/Al and interfaces between layers [ 69 ].…”

Section: Figurementioning

confidence: 99%

See 2 more Smart Citations

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Qin,

He,

Han

et al. 2024

Nanomaterials

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Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future.

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Section: Materials Properties and Preparation Processesmentioning

confidence: 99%

Section: Applications In Advanced Memory Devicesmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

See 1 more Smart Citation

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Qin,

He,

Han

et al. 2024

Nanomaterials

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“…They investigated the electric field induced inversion domains, as well as the non-switched domains at the bottom electrode interface, providing critical information for understanding the domain evolution process during polarization switching in wurtzite materials. Subsequently, the impact of the nitrogen-to-argon gas ratio and target power ratios, plasma modes, sputter power, deposition temperature, crystal orientation, film stress, surface roughness, Sc content, and deposition rate on ferroelectric properties of ScAlN have been intensively investigated [62,64,[144][145][146][147][148][149][150][151][152][153].…”

Section: Experimental Demonstration Of Ferroelectricity In Nitridesmentioning

confidence: 99%

Dawn of nitride ferroelectric semiconductors: from materials to devices

Wang

Mondal

et al. 2023

Semicond. Sci. Technol.

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III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, BAlN, and hBN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear, and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.

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An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory

Wang

Mondal

et al. 2022

Adv Elect Materials

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Electrically switchable bistable conductance that occurs in ferroelectric materials has attracted growing interest due to its promising applications in data storage and in‐memory computing. Sc‐alloyed III‐nitrides have emerged as a new class of ferroelectrics, which not only enable seamless integration with III‐nitride technology but also provide an alternative solution for CMOS back end of line integration. In this paper, the resistive switching behavior and memory effect in an ultrawide‐bandgap, high Curie temperature, fully epitaxial ferroelectric ScAlN/GaN heterostructure is reported for the first time. The structure exhibits robust ON and OFF states that last for months at room temperature with rectifying ratios of 60–210, and further shows stable operation at high temperatures (≈670 K) that are close to or even above the Curie temperature of most conventional ferroelectrics. Detailed studies suggest that the underlying mechanism is directly related to a ferroelectric field effect induced charge reconstruction at the hetero‐interface. The robust resistive switching landscape and the electrical polarization engineering capability in the polar heterostructure, together with the promise to integrate with both silicon and GaN technologies, can pave the way for next‐generation memristors and further enable a broad range of multifunctional and cross‐field applications.

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Towards Realizing the Low-Coercive Field Operation of Sputtered Ferroelectric ScxAl1-xN

Cited by 15 publications

References 14 publications

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Dawn of nitride ferroelectric semiconductors: from materials to devices

An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory

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