Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization

Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

“…Therefore, a thin buffer layer is anticipated to achieve outstanding solar cell performances. The optimum thickness of the buffer layer is selected to be 60 nm for the following calculations in this simulation work, which is consistent with the buffer thickness employed in the previous works [37,39,40]. In this simulation, the effect of the CdS donor density ranging from 1 × 10 12 to 5 × 10 18 cm −3 with 2000-nm-thick absorber (acceptor density of 3.7 × 10 18 cm −3 ), 60-nm-CdS, and 50-nm-FTO (donor density of 1 × 10 18 cm −3 ) is analyzed.…”

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

“…Moreover, a strong electric field at the back of the solar cell can be induced due to the formation of p + –p high–low junction by the introduction of p + ‐type SnS HTL at the back of the p‐Sb 2 Se 3 absorber, [ 43,46 ] as shown in Figure 2c. This enhanced built‐in electric potential along the absorber layer would not only be effective to reflect the minority electrons from the back surface, but also to boost the collection of the photogenerated electrons and holes.…”

“…In the last few years, antimony selenide (Sb 2 Se 3 ) semiconductor has received considerable attention as an attractive absorber material in the thin‐film heterojunction photovoltaic device due to its high absorption coefficient (>10 5 cm −1 ), favorable energy bandgap (1–1.2 eV), reasonable carrier mobility, low toxicity, earth‐abundant constituents, inexpensive, low temperature fabrication process, and excellent stability. [ 20–30 ] In the previous works, several experimental [ 20–23,27,31–40 ] and theoretical [ 41–47 ] studies on improving the performances of the Sb 2 Se 3 ‐based solar cells have been reported. There have been numerous experimental Sb 2 Se 3 ‐based heterojunction solar structures, including TiO 2 /Sb 2 Se 3 , [ 18 ] TiO 2 /Sb 2 Se 3 /CuSCN, [ 31 ] CdS/Sb 2 Se 3 , [ 23,32,33,35,36,38–40 ] CdS/Sb 2 Se 3 /PbS, [ 34 ] and CdS/Sb 2 Se 3 /CuSCN, [ 37 ] described to achieve excellent photovoltaic performance.…”

“…The more recent experimental efficiency of the Sb 2 Se 3 solar cell has been reported to be 9.2% with a device structure of ZnO:Al/ZnO/CdS/TiO 2 /Sb 2 Se 3 nanorod arrays/MoSe 2 /Mo. [ 27 ] On the other hand, the numerical simulation approaches on the Sb 2 Se 3 solar cells with different heterostructures of CdS/Sb 2 Se 3 , [ 41 ] ZnO/CdS/Sb 2 Se 3 , [ 42 ] hole transport layer (HTL)/Sb 2 Se 3 /electron transport layer (ETL), [ 43 ] In 2 S 3 /Sb 2 Se 3 /Cu 2 O, [ 44 ] CdS/Sb 2 Se 3 /HTL, [ 45 ] Zn 0.93 Mg 0.07 O/ZnO 0.4 S 0.6 /TiO 2 /Sb 2 Se 3 /MoSe 2 , [ 46 ] and Zn(Sn,O)/Sb 2 Se 3 /CZTSe [ 47 ] report the conversion efficiency to lie in the range of 11.52–24.7%. However, the obtained efficiencies with the previous different device configurations for the Sb 2 Se 3 solar cell are still lower than the commercially available TFSCs as well as from the expected Shockley–Queisser efficiency limit of 32.23%.…”

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

“…The holes and electrons trap capture cross section are set at 10 −15 cm 2 . [ 47,48 ] The defect level of 10 10 cm −2 at both back and front interfaces is selected. The aluminum (Al) as front electrode and nickel (Ni) as the rear electrode having work functions of 4.24 and 5.35 eV are employed, respectively.…”