We investigate the influence of plasma treatments, especially a 0 V-bias, potentially low damage O 2 plasma as well as a biased Ar/SF 6 /O 2 plasma on shallow, negative nitrogen vacancy (NV − ) centers. We ignite and sustain using our 0 V-bias plasma using purely inductive coupling. To this end, we pre-treat surfaces of high purity chemical vapor deposited single-crystal diamond (SCD). Subsequently, we create ∼10 nm deep NV − centers via implantation and annealing. Onto the annealed SCD surface, we fabricate nanopillar structures that efficiently waveguide the photoluminescence (PL) of shallow NV − . Characterizing single NV − inside these nanopillars, we find that the Ar/SF 6 /O 2 plasma treatment quenches NV − PL even considering that the annealing and cleaning steps following ion implantation remove any surface termination. In contrast, for our 0 V-bias as well as biased O 2 plasma, we observe stable NV − PL and low background fluorescence from the photonic nanostructures.