Abstract:Transferable highly (001)-oriented textured ferroelectric BaTiO3 thin films have been achieved on a graphene monolayer for wearable devices like sensors and actuators for future “Internet of Things” era.
“…S10 in SI. Moreover, interestingly, it was reported that BTO films grown on bare Ge (001) substrates using interface engineering were single crystalline 33 whereas BTO films grown on the graphene/SiO 2 /Si template were similarly textured with (001)-orientation, which reveals that graphene layer hinders the epitaxy of BTO on Ge (001) but induces the textured structure of BTO 34 . Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the BTO 3-δ exfoliated remote epitaxial film has a GF being four times larger than that of “conventional” BTO films. The stoichiometric epitaxial BTO film was fabricated on Nb:STO using PLD in oxygen-rich ambience at 650 °C, which was reported by many groups 34 , 41 , 42 . XRD RSM patterns shown in Fig.…”
The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.
“…S10 in SI. Moreover, interestingly, it was reported that BTO films grown on bare Ge (001) substrates using interface engineering were single crystalline 33 whereas BTO films grown on the graphene/SiO 2 /Si template were similarly textured with (001)-orientation, which reveals that graphene layer hinders the epitaxy of BTO on Ge (001) but induces the textured structure of BTO 34 . Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the BTO 3-δ exfoliated remote epitaxial film has a GF being four times larger than that of “conventional” BTO films. The stoichiometric epitaxial BTO film was fabricated on Nb:STO using PLD in oxygen-rich ambience at 650 °C, which was reported by many groups 34 , 41 , 42 . XRD RSM patterns shown in Fig.…”
The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.
“…The thickness of the Pt electrode of the control device is 5 nm, whereas the graphene monolayer is known to be 3 Å thin [ 20 , 23 , 24 ]. For reference, in this study, the pillar (TiN) and plane (Pt or graphene) electrodes are presented as top and bottom electrodes, unless otherwise stated.…”
Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms.
“…The dark current was tested by a semiconductor characterization system (Keithley 4200). A 6-circle XRD (SmartLab, Rigaku, Tokyo, Japan) system was used to test the crystallinity of the diamond containing both the substrate and epitaxial layers [28]. The confocal micro-Raman spectrometer (Renishaw inVia, New Mills, UK) was used to evaluate the diamond defect structures.…”
A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
