Toward the Design of a Sequential Two Photon Photoacid Generator for Double Exposure Photolithography

O’Connor, Naphtali; Berro, Adam J.; Lancaster, Jeffrey R.; Gu, Xinyu; Jockusch, Steffen; Nagai, Takeharu; Ogata, Toshiyuki; Lee, Saul; Zimmerman, Paul; Willson, C. Grant; Turro, Nicholas J.

doi:10.1021/cm802343u

Cited by 28 publications

(21 citation statements)

References 13 publications

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“…PAG materials were synthesized as previously reported. 7 Butyl and hexyl azobenzene dopants ( Figure 2) were synthesized according the method of Rondeau et al 8 Acetone was dried over molecular sieves and distilled before use. The mesogen for hydrosilylation was synthesized as shown in …”

Section: Methodsmentioning

confidence: 99%

Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography

Berro

O’Connor

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Intermediate state two-photon (ISTP) photoacid generator (PAG) and optical threshold layer (OTL) approaches to double exposure lithography have been explored. We have synthesized "transparent" PAG and sensitizer compounds for use in ISTP systems and have demonstrated the possibility of utilizing such energy transfer systems to generate acid. We have also synthesized side chain liquid crystalline polymers and small molecule azobenzene compounds for use in OTL applications and have begun photoswitching studies.

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Section: Methodsmentioning

confidence: 99%

Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography

Berro

O’Connor

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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“…Conventional photo-resist materials are not available in DET because sub-threshold exposure in the first exposure reduces the dose required to make the photo-resist soluble in the second exposure [9,10]. Material integration of DET is difficult compared to SADP and cross DPT because required characteristics of photo-resist materials for DET are complex compared to those of SADP and cross DPT [9,10]. Materials are available and material integrations are not difficult in SADP and cross DPT because conventional photo-resist materials are used in SADP and cross DPT.…”

Section: Process Integration Of Memory Cell Capacitor With Cross Doubmentioning

confidence: 99%

Robust memory cell cylinder capacitor with cross double patterning technology

Kim

2010

Solid-State Electronics

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“…The simplest form of triple patterning is triple exposure (Figure 2a) which requires a nonlinear photoresist. Possible candidates include contrast enhancement layer (CEL) 1 and two-photon absorption materials 2 . Figure 2b shows the logic extension of the litho-etch-litho-etch (LELE) 3 to litho-etch-litho-etchlitho-etch (LELELE).…”

Section: Higher Order Pitch Division Lithographymentioning

confidence: 99%

Analysis of higher order pitch division for sub-32nm lithography

Xie

Smith

2009

SPIE Proceedings

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The three knobs of optical lithography, namely process factor k 1 , wavelength (λ) and numerical aperture (NA) have been constantly pushed to print smaller features. To get an equivalent k 1 value below the fundamental limit of 0.25, double patterning (DP) has recently emerged as a viable solution for the 32nm lithography node. Various DP techniques exist such as litho-etch-litho-etch (LELE), litho-freeze-litho-freeze (LFLF) and self-aligned sidewall spacer. In this paper, the potential of higher order pitch division (pitch/N, N>2) for sub-32nm lithography is analyzed. Compared to double patterning, higher order pitch division lithography offers higher resolution but also faces significant challenges such as added cost and tighter process control. Several process schemes are proposed and compared in terms of complexity, susceptibility to alignment error and CD uniformity control. It is shown that the overlay budget does not necessarily decrease compared to double patterning. The main challenge in higher order pitch division comes from controlling the key processing steps that directly form lines or spaces. In addition, line CD control is easier than space (gap) control in all four "positive-tone" processes studied, similar to the double patterning case. Among the proposed processes, a freezing assisted double spacer (FADS) process that is simpler than the common sidewall spacer approach shows promise for balanced process control.

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Toward the Design of a Sequential Two Photon Photoacid Generator for Double Exposure Photolithography

Cited by 28 publications

References 13 publications

Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography

Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography

Robust memory cell cylinder capacitor with cross double patterning technology

Analysis of higher order pitch division for sub-32nm lithography

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