Advances in Resist Materials and Processing Technology XXVI 2009
DOI: 10.1117/12.814295
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Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography

Abstract: Intermediate state two-photon (ISTP) photoacid generator (PAG) and optical threshold layer (OTL) approaches to double exposure lithography have been explored. We have synthesized "transparent" PAG and sensitizer compounds for use in ISTP systems and have demonstrated the possibility of utilizing such energy transfer systems to generate acid. We have also synthesized side chain liquid crystalline polymers and small molecule azobenzene compounds for use in OTL applications and have begun photoswitching studies.

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“…There are proposals to make the resist forget the first exposure before getting the second exposure [1,2,3]. Instead of a self-erasing resist, a non-linear resist [4] whose latent image is nonlinear to the aerial image in the form of [4] The general binomial series can be expressed by Combining equations 2 to 5, The contrast increases from 0 towards unity as J increases.…”
Section: Double Patterning Using 193-nm Water-immersion Lithographymentioning
confidence: 99%
“…There are proposals to make the resist forget the first exposure before getting the second exposure [1,2,3]. Instead of a self-erasing resist, a non-linear resist [4] whose latent image is nonlinear to the aerial image in the form of [4] The general binomial series can be expressed by Combining equations 2 to 5, The contrast increases from 0 towards unity as J increases.…”
Section: Double Patterning Using 193-nm Water-immersion Lithographymentioning
confidence: 99%