Toward SiC-JFETs modelling with temperature dependence

Salah, Tarek Ben; Morel, Hervé; Mtimet, Sameh

doi:10.1051/epjap/2010139

Cited by 12 publications

(12 citation statements)

References 6 publications

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“…This circuit presented in Fig. 5 can control transistors such as MOSFET, IGBT or SiC-JFET (normally on [1]). It can deliver a pulse signal between 0V and 15V for the traditional silicon transistor and a signal between -20V and 0V for a SiC-JFET transistor.…”

Section: Driver Circuitmentioning

confidence: 99%

“…As long as the I DS (t) is lower than I DS the diode D remains conducting and V DS (t) theoretically must remain equal to V E . The t RI = t 2 -t 1 is the necessary time to charge the internal capacities of the JFET primarily the C iss capacitance (1) to reach the charging current I DS . The time t 2 -t 1 defined also the descent time of the drain source voltage, t FV .…”

Section: A Sic-jfet Turn-offmentioning

confidence: 99%

“…Another wide band gap materials such as; silicon carbide (SiC), gallium nitride (GaN) or diamond, are a good candidate for power devices. Literatures [1,2,3] show that SiC devices can satisfy the automotive industry demand for power converters. The test of these new devices has all importance to improve the theoretical systems ambitions.…”

mentioning

confidence: 99%

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A low-cost experimental test bench for electronic power devices

Mtimet

Kourda

Salah

2014

2014 International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM)

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A low-cost experimental test bench is proposed to test electronic power devices such as Diode, MOSFET, and JFET. This bench is based on the dc-dc converter. This latter controls the applied voltage and current. The proposed experimental bench consists to test devices in various types of dc-dc converter according to the current and voltage levels required. Experimental measurements of the new silicon carbide JFET device, for example, are presented and discussed.

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Section: Driver Circuitmentioning

confidence: 99%

Section: A Sic-jfet Turn-offmentioning

confidence: 99%

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A low-cost experimental test bench for electronic power devices

Mtimet

Kourda

Salah

2014

2014 International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM)

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“…SemiSouth Inc., University of South Carolina, and University of Lyon, etc. have developed physical models for SiC JFET with thermal effect [3] [4]. Kuang Sheng has developed a physical model, including both DC and AC characteristics, for 4H-SiC lateral JFET at room and high temperature (300°C) [5].…”

Section: Introductionmentioning

confidence: 99%

Data driven modeling and verification for silicon carbide JFET with thermal effects

Li-gang

Zhu

2014

2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014

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A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that it saves the trouble of obtaining the physical parameters. Besides, the effect of temperature on SiC JFET performance is taken into account. It is important because the physical parameters on materials and dimensions of a particular SiC JFET device are difficult to be obtained for device users. The model is implemented based directly upon the characteristics of device datasheet and data from experimental tests. Simulation and experiments are carried out for the research of steady state characteristics, switching characteristics and short-circuit characteristics, which verify the accuracy of the model. Method of data driven modeling can be applied to the other power semiconductor switches.

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“…Besides the study on normally-on devices, SemiSouth Inc. and the university of Gallo Lingner, etc. have collaborated further in joint research in physical models for normally-off SiC JFET with thermal effect [3] [4] . In addition, Kuang Sheng in Zhejiang University, China, has developed a physical model, including both DC and AC characteristics, for 4H-SiC lateral JFET at room temperature and high temperature (300°C) [5] .…”

Section: Introductionmentioning

confidence: 99%

A data driven model for silicon carbide JFET with thermal effects

Zhu

Li-gang

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that this modeling method saves the trouble of obtaining the physical parameters and the temperature of SiC JFET is taken into account. These are particularly important because the device's physical parameters on materials and dimensions are hardly to be obtained and temperature has effects on the other major parameters. The model is implemented in SABER based on the characteristics of the datasheet and the test data. Both simulation and experiment tests are carried out for the research of static characteristics, gate switching characteristics and short-circuit characteristics, which verify the accuracy of the model. Besides, method of data driven modeling can also be applied to the other modern power devices.

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Toward SiC-JFETs modelling with temperature dependence

Cited by 12 publications

References 6 publications

A low-cost experimental test bench for electronic power devices

A low-cost experimental test bench for electronic power devices

Data driven modeling and verification for silicon carbide JFET with thermal effects

A data driven model for silicon carbide JFET with thermal effects

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