Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETs

Yuan, Zhi Cheng; Gudem, Prasad S.; Wong, Michael; Wang, Ji Kai; Hook, T.B.; Solomon, P. M.; Kienle, Diego; Vaidyanathan, Mani

doi:10.1109/ted.2019.2901668

Cited by 8 publications

(1 citation statement)

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“…The charge pump used in a good memory needs to meet the driving voltage and driving current and has the smallest possible area and power consumption. The specific design depends on different types of memory [26]. New devices combining ferroelectric materials and semiconductor devices have gradually been applied.…”

Section: Embedded Ferroelectric Memory and Noncontact Icmentioning

confidence: 99%

[Retracted] Realization of a Noncontact IC Chip with Embedded Ferroelectric Memory in an Auxiliary Timing Device for Sports Games

Chen

2022

Journal of Nanomaterials

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The research direction of the new generation of embedded memory can be summarized into two types of embedded nonvolatile memory and embedded volatile memory; the research on online testing of embedded memory started in the past ten years, and there are few research results. This article analyzes the feasibility of the noncontact IC chip in the embedded ferroelectric memory of the sports game auxiliary timing device and is aimed at obtaining an optimized embedded ferroelectric memory by analyzing the relevant data to achieve the update and update of the sports game timing device system. Early sports event timing methods generally use manual timing (stopwatch) or camera shooting timing; this method is inefficient, poor real-time, huge workload, and prone to errors. This research mainly focuses on the analysis and discussion of the material structure and performance of the embedded ferroelectric memory and the process of noncontact IC chip. This article uses custom welding circuit technology to prepare the best ferroelectric filter in the test part and verifies the influence of temperature on the material; in order to understand the properties of ferroelectric materials at the electronic and atomic level, a first-order statistical method is obtained. The numerical calculation results of the experiment verify that the evaluation value of the serial port synchronization module as a whole exceeds the pulse synchronization; the network synchronization as a whole exceeds the code synchronization, and the result of the network time service module is the opposite, but as a whole, each module of the noncontact IC chip has strong performance adaptability; in the application of auxiliary timing, the maintainability of noncontact IC chip is quite outstanding, and the maximum value is 7.97; a large number of complex simulation system tasks can be completed by simple and direct tasks.

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Section: Embedded Ferroelectric Memory and Noncontact Icmentioning

confidence: 99%