Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Ajayan, J.; Mohankumar, P.; Nirmal, D.; Joseph, L. M. I. Leo; Bhattacharya, Sandip; Sreejith, S.; Kollem, Sreedhar; Rebelli, Shashank; Tayal, Shubham; Mounika, B.

doi:10.1016/j.mtcomm.2023.105591

Cited by 12 publications

(7 citation statements)

References 207 publications

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“…2D ferroelectric field-effect transistors (FeFET) are one of the representative ferroelectric devices. In analogy with the traditional FET, the architecture of FeFET consists of the same semiconducting channel but ferroelectric dielectric insulators like doped HfO 2 , PZT, and P(VDF-TrFE) replacing the traditional dielectric layer such as SiO 2 and Al 2 O 3 . − The polarization rather than external electric bias is utilized to control the on/off state of the channel. It is worth noting that the retention of polarization does not require a sustained electric field.…”

Section: Device Application Based On 2d Materials Integrated With Fer...mentioning

confidence: 99%

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Liu,

Cui,

Bian

et al. 2024

ACS Nano

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In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

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Section: Device Application Based On 2d Materials Integrated With Fer...mentioning

confidence: 99%

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Liu,

Cui,

Bian

et al. 2024

ACS Nano

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“…The profound interest in implementing AI-based approaches, such as neuromorphic computing, that require durable and continuously valued data sets, has intensified the need for analog, non-volatile memory devices. Recently, engineers have innovated memory storage with the introduction of analog, nonvolatile ferroelectric field-effect [102,103], resistive random access memory [104][105][106], magnetic random access memory [107,108] and phase change memory technologies [109][110][111]. Analog, non-volatile memory has been instrumental in the continuing maturation of AI-based neural networks [84,112,113], image analytic platforms [114] and bio-sensor devices [115,116].…”

Section: The Graphics Processing Unitmentioning

confidence: 99%

Leveraging the Academic Artificial Intelligence Silecosystem to Advance the Community Oncology Enterprise

McDonnell

2023

JCM

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Over the last 75 years, artificial intelligence has evolved from a theoretical concept and novel paradigm describing the role that computers might play in our society to a tool with which we daily engage. In this review, we describe AI in terms of its constituent elements, the synthesis of which we refer to as the AI Silecosystem. Herein, we provide an historical perspective of the evolution of the AI Silecosystem, conceptualized and summarized as a Kuhnian paradigm. This manuscript focuses on the role that the AI Silecosystem plays in oncology and its emerging importance in the care of the community oncology patient. We observe that this important role arises out of a unique alliance between the academic oncology enterprise and community oncology practices. We provide evidence of this alliance by illustrating the practical establishment of the AI Silecosystem at the City of Hope Comprehensive Cancer Center and its team utilization by community oncology providers.

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“…Since the discovery of ferroelectricity in HfO 2 films in 2011, 1) materials based on HfO 2 have been widely studied for device applications such as FeFETs [2][3][4][5][6][7][8] and FeRAMs. [9][10][11][12] HfO 2 -based materials thinner than 10 nm thick are more compatible with Si CMOS technology and have better polarization properties compared with conventional perovskite materials such as Pb(Zr,Ti)O 3 .…”

Section: Introductionmentioning

confidence: 99%

Improvement in the polarization properties in thin ferroelectric Hf_0.5Zr_0.5O₂ films by two-step flash lamp annealing

Tanimura,

Ota,

Ueno

et al. 2024

Jpn. J. Appl. Phys.

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In this study, we systematically studied the polarization properties of thin ferroelectric Hf0.5Zr0.5O2 (HZO) films annealed by flash lamp annealing (FLA). We have recently proposed a unique annealing method, two-step FLA, which features high temperature annealing with a minimal increase in thermal budget. Using this technique, we observed improvements in the polarization properties in 5nm HZO films. These were an increase in the remanent polarization (2Pr) to 24.2 µC/cm2 and better durability compared with other more conventional annealing techniques. In addition, we confirmed that there was no degradation in 2Pr under thermal stress. Two-step FLA is one of the effective ways to obtain ferroelectricity with high values of 2Pr and good durability in HZO films thinner than 5nm.

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Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Cited by 12 publications

References 207 publications

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Leveraging the Academic Artificial Intelligence Silecosystem to Advance the Community Oncology Enterprise

Improvement in the polarization properties in thin ferroelectric Hf_0.5Zr_0.5O₂ films by two-step flash lamp annealing

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Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Cited by 12 publications

References 207 publications

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Leveraging the Academic Artificial Intelligence Silecosystem to Advance the Community Oncology Enterprise

Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing

Contact Info

Product

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Improvement in the polarization properties in thin ferroelectric Hf_0.5Zr_0.5O₂ films by two-step flash lamp annealing