Toward Linearity in Schottky Barrier CNTFETs

Mothes, Sven; Claus, Martin; Schröter, M.

doi:10.1109/tnano.2015.2397696

Cited by 55 publications

(36 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 shows the transconductance. It does not exhibit a constant or broad peak region that is attributed to linearity and would be expected from theoretical considerations [6], [7]. The new model accurately captures both the peaky curve shapes and the absolute values as a function of V DS , while models based on an analytical solution of the Landauer equation show large deviations to the measured AC data [9].…”

Section: Resultsmentioning

confidence: 99%

“…The latter correspond to a self-consistent solution of the semiclassical Boltzmann transport equation (BTE) and the Poisson equation [6], [18]. Since the measured device behavior is expected to be dominated by SB-related effects, the latter are also incorporated in the device simulation by modeling the tunneling through the barrier with the WKB method [19], [20].…”

Section: Model For Semiconducting Tubesmentioning

confidence: 99%

“…Scaling of (left) peak transconductance g m and (right) peak transit frequency f t with total gate width w Gf : comparison between measurements (+) and compact model (o). The respective total gate width was realized with the following combinations of number of gate fingers and gate width (μm) (from left to right): [20,6], [20,16], [8,46], [8,66], [20,38], and [12,66].…”

Section: B Device Structure Dependence-external Transistormentioning

confidence: 99%

See 2 more Smart Citations

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators. IndexTerms-Carbon nanotube field-effect transistor (CNTFET), compact transistor modeling, high-frequency circuit design.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Model For Semiconducting Tubesmentioning

confidence: 99%

Section: B Device Structure Dependence-external Transistormentioning

confidence: 99%

See 1 more Smart Citation

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…The electrostatic potential, ψ(r), inside a transistor contains a transverse potential ψ t (r), which describes the electrostatics perpendicular to the channel and represents a partial solution of Poisson's equation, as well as a longitudinal potential ψ l (r) called evanescent mode, responsible for the potential variation along the channel. The transverse potential inside the channel is reduced to ψ t (r) ≈ ψ cc , where ψ cc is the channel (surface) potential at the current control point [37], [38]. The longitudinal solution ψ l (r) is obtained solving the Laplace equation along the transport direction.…”

Section: A Energy Band Modelmentioning

confidence: 99%

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

Bejenari

Schröter

Claus

2017

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Abstract-A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the FermiDirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub 10 nm CNTFETs.Index Terms-Carbon-nanotube field-effect transistor (CNT-FET), analytical transport model, Schottky barrier (SB), tunneling, Wentzel-Kramers-Brillouin (WKB) approximation.

show abstract

“…This material has received significant attention due to its outstanding electrical properties [1]- [5], even though, it is currently a challenge to design and fabricate a device that can actually exploit these properties [6].…”

mentioning

confidence: 99%

Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Haferlach

Pacheco

Sakalas

et al. 2016

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

Experimental results gained by various electrical characterization techniques are discussed and compared for a CNTFET technology, which suffers as almost all emerging technologies from traps in the gate oxide. Based on these results, it is highlighted that, contrary to common practice, a fast data acquisition technique is required to ensure a proper electrical device characterization in terms of (i) trap-free device characteristics, (ii) reproducible experimental results and (iii) a consistent set of DC and small-signal (AC) characteristics. It is argued that a reasonable technology comparison among emerging technologies must be based on data fulfilling these criteria since trap-affected measurements distort the device behavior which can lead to wrong conclusions about the performance of a device such as the apparent linearity. A trap model capturing the above mentioned issues is briefly introduced. Moreover, the challenges of the electrical characterization of high-impedance devices are explored.

show abstract

Toward Linearity in Schottky Barrier CNTFETs

Cited by 55 publications

References 20 publications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Contact Info

Product

Resources

About