Toward highly efficient CdS/CdSe quantum dot-sensitized solar cells incorporating a fullerene hybrid-nanostructure counter electrode on transparent conductive substrates

Abstract

The structural and catalytic properties of fullerene counter electrode for CdS/CdSe-QDSCs are systematically investigated. An efficiency of 4.18% is achieved.

Effect of boron-doping on the electroluminescence properties of CdS/Si heterostructure based on Si nanoporous pillar array

“…In recent years, semiconductor nanoheterostructures have attracted worldwide interests because of their promising applications in many areas, such as nanogenerators [1], solar cells [2] and light-emitting diodes [3]. In particular, the electrically driven light emission was realized with semiconductor nanoheterostructures, where carrier injection occurs across the p-n junction [3,4].…”

“…Silicon nanoporous pillar array (Si-NPA) characterized by a micron-nanometer hierarchical structure can be used as functional substrates for constructing optoelectronic nanodevices [5]. As an important II-VI group semiconductor compound, CdS has been considered as a perspective optoelectronic material for utilization in solar cells [2], light-emitting diodes [6,7], light detectors [8], etc. CdS can be grown through many techniques, such as spray pyrolysis [9], chemical vapor deposition [3] and chemical bath deposition (CBD) [10].…”

Fabrication and Photosensitivity of CdS/Silicon Nanoscrew Photoresistor

“…Cadmium sulfide (CdS) as an important II–VI semiconductor compounds has aroused significant interest on the electronic and optoelectronic devices such as solar cells,, light emitting diodes and photoresistors . For the photoresistor, when it is exposed to light with certain wavelength, the resistance of the photon sensitive material will be decreased sharply for the photon‐generated carriers.…”

“…fabricated a pyramid and nanostructure binary structure on silicon wafer with ultra low reflectance . However, these nanostructures are too dense to thin film package, which are not suitable for photoresistor as substrates . In our previous work, we fabricated silicon nanopillar with the aspect ratio about 2 by Cesium Chloride (CsCl) self‐assembly lithography and inductively coupled plasma (ICP) dry etching, and then covered the CdS film to nanopillar surface, which can improve the photosensitivity of the photoresistor obviously .…”

Fabrication and Photovoltaic Effect of CdS/Silicon Nanopillars Heterojunction Solar Cell

“…As a vital and classical II–VI semiconductor, cadmium sulfide (CdS) with the band gap ∼ 2.42 eV is a fascinating material with versatile and fundamental properties such as the direct band gap, relative low work function, high refraction index, excellent transport properties, good chemical and thermal stability, high electronic mobility, and piezoelectricity. These unique properties make CdS one of the most important electronic and optoelectronic materials in the electronic and optoelectronic devices such as solar cells, light emitting diodes and photoresistor, which is generally used as n‐type window layer to provide the electrons.…”