Toward High‐Output Organic Vertical Field Effect Transistors: Key Design Parameters

Abstract

The performance of C60‐based organic vertical field‐effect transistors (VFETs) is investigated as a function of key geometrical parameters to attain a better understanding of their operation mechanism and eventually to enhance their output current for maximal driving capability. To this end, a 2D device simulation is performed and compared with experimental results. The results reveal that the output current scales mostly with the width of its drain electrode, which is in essence equivalent to the channel width in conventional lateral‐channel transistors, but that of the source electrode and the thickness of C60 layers underneath the source electrode also play subtle but important roles mainly due to the source contact‐limited behavior of the organic VFETs under study. With design strategies acquired from this study, a VFET with an on/off ratio of 5.5 × 105 and on‐current corresponding to a channel length of near 1 μm in a conventional lateral‐channel organic field‐effect transistor (FET) is demonstrated, while the drain width of the VFET and the channel width of the lateral‐channel organic FET are the same.

Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

“…As the first and vital stage to the development of neuromorphic structure, it is indispensable to explore plastic synapse‐like devices. Nowadays, memristor, phase‐change memory, as well as the field‐effect transistor have been under vigorous study for implementation of an ideal synaptic device. However, device‐level impediments still exist.…”

A Review of Vertical Organic Transistors

“…Hence, the influence of the contacts can only be analyzed by modeling in conjunction with a comparison to the experiment. The first attempt to model the transport including the contact effects have been reported by Kwon et al They modeled the contact properties by taking into account the barrier height for injection at the source electrode and the lateral and vertical resistance of the semiconductor film between the source electrode and the gate insulator (current‐crowding model). In particular, they highlighted that the overall contact resistance is mainly limited by the barrier between the source metal and the semiconductor if the height of the barrier is ≥0.3 eV.…”

Vertical Organic Field‐Effect Transistors

“…[51] By inserting a thin injection layer of p-dopants (C 60 F 36 ) underneath the source electrode, the corresponding VOFET performances could be greatly improved with one order of magnitude enhancement for both on/off ratio and transconductance. [32,[55][56][57] b-1) Illustration of the Au/Ag metallic nanowires VOFET architecture.…”

“…Although there are numerous publications regarding planar OFETs and significant advances have been achieved, [22,23] an inherent disadvantage of planar OFETs is their relatively larger conducting channels (usually in micrometers or even much larger scales). [32][33][34][35] The aim of this review is to give a comprehensive summary on these big progress achieved in this field including the development of novel device architectures and potential applications, which is different from previous reviews that focus on operation mechanisms of VOFETs. In this context, vertical organic field-effect transistors (VOFETs) have gained special interests in organic electronics since its first report in 2004.…”