2017
DOI: 10.1002/anie.201707635
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Toward Cost‐Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High‐Quality Si Films in a CaCl2‐based Molten Salt

Abstract: Electrodeposition of Si films from a Si-containing electrolyte is a cost-effective approach for the manufacturing of solar cells. Proposals relying on fluoride-based molten salts have suffered from low product quality due to difficulties in impurity control. Here we demonstrate the successful electrodeposition of high-quality Si films from a CaCl -based molten salt. Soluble Si -O anions generated from solid SiO are electrodeposited onto a graphite substrate to form a dense film of crystalline Si. Impurities in… Show more

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Cited by 69 publications
(64 citation statements)
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“…Thesilicon deposited on agraphite cathode with the Ti 4 O 7 anode is essentially the same as that with the graphite anode under the same experimental conditions. [8,9] Thesimultaneous deposition was also confirmed by XRD and SEM results after electrolysis (Figure 7). It was also confirmed that the silicon products deposited at the cathode depend on the cathodic current density applied during the electrolysis.W hen the cathodic current density was set at % 10 mA cm À2 or al ower current density,silicon micro/nanowires with adiameter from hundreds of nanometers to % 3 mmc an be obtained (Figure 7a).…”
Section: Resultsmentioning
confidence: 52%
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“…Thesilicon deposited on agraphite cathode with the Ti 4 O 7 anode is essentially the same as that with the graphite anode under the same experimental conditions. [8,9] Thesimultaneous deposition was also confirmed by XRD and SEM results after electrolysis (Figure 7). It was also confirmed that the silicon products deposited at the cathode depend on the cathodic current density applied during the electrolysis.W hen the cathodic current density was set at % 10 mA cm À2 or al ower current density,silicon micro/nanowires with adiameter from hundreds of nanometers to % 3 mmc an be obtained (Figure 7a).…”
Section: Resultsmentioning
confidence: 52%
“…[8,9] Thep hotoelectrochemical (PEC) response of the deposited p-type silicon film was 30 to 40 %ofthat of aptype silicon wafer, as shown in Figure 7f,and about the same as afilm deposited using agraphite anode. [8,9] Elementary Al dissolved from quartz crucible has been confirmed as adopant for the p-type silicon film and its concentration is about 10 ppm. [9] Note that the small dark current in the PEC response can be mainly attributed to the pin-holes in the deposited Si film.…”
Section: Resultsmentioning
confidence: 91%
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“…25,28) Specifically, electrodeposition was conducted on the Si , and the obtained films were annealed to remove impurities. 36) Table I shows the Seebeck coefficients (600-900 µV K −1 ) and resistivities (400-800 Ω cm) of doped Si thin films, with the positive values of the former coefficients suggesting that films electrodeposited in TMHA-TFSI containing 0.5 M SiCl 4 and 8.8 × 10 −4 M AlCl 3 exhibited p-type characteristics.…”
Section: Resultsmentioning
confidence: 99%