Toward 300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor Deposited Graphene Transistors

Abstract

The largest applications of high-performance graphene will likely be realized when combined with ubiquitous Si very large scale integrated (VLSI) technology, affording a new portfolio of "back end of the line" devices including graphene radio frequency transistors, heat and transparent conductors, interconnects, mechanical actuators, sensors, and optical devices. To this end, we investigate the scalable growth of polycrystalline graphene through chemical vapor deposition (CVD) and its integration with Si VLSI technology. The large-area Raman mapping on CVD polycrystalline graphene on 150 and 300 mm wafers reveals >95% monolayer uniformity with negligible defects. About 26,000 graphene field-effect transistors were realized, and statistical evaluation indicates a device yield of ∼ 74% is achieved, 20% higher than previous reports. About 18% of devices show mobility of >3000 cm(2)/(V s), more than 3 times higher than prior results obtained over the same range from CVD polycrystalline graphene. The peak mobility observed here is ∼ 40% higher than the peak mobility values reported for single-crystalline graphene, a major advancement for polycrystalline graphene that can be readily manufactured. Intrinsic graphene features such as soft current saturation and three-region output characteristics at high field have also been observed on wafer-scale CVD graphene on which frequency doubler and amplifiers are demonstrated as well. Our growth and transport results on scalable CVD graphene have enabled 300 mm synthesis instrumentation that is now commercially available.

Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gate

“…Graphene synthesis technology is rapidly approaching a commercially viable level, where continuous graphene films of high structural integrity are routinely produced on wafer-scale [1][2][3][4][5][6] or even m 2 scale [7,8], with projected throughput of order 10 5 m 2 /year for CVD production tools [9]. Even so, no viable means for assessing consistency in electronic properties across these length scales or area production rates are currently offered by the prevailing electronic characterization methods, typically based on field-effect or Hall mobility measurements in lithographically defined devices.…”

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

“…Further, the observed symmetric 2D peak with average full width at half maximum of 33.8 cm −1 , an average I 2D /I G of~2.5, and negligible D peak intensity are together indicative of high quality CVD-grown monolayer graphene. [41][42][43][44][45] sample obtained from the same synthesis but transferred to a SiO 2 /Si substrate provide more information about the D peak and are presented in Supplementary Fig. S5.…”

Graphene and Two-Dimensional Materials for Optoelectronic Applications

“…They synthesized 30 inch-wide graphene films using a thermal-release tape-based transfer with good electrical and physical properties [16]. The synthesis of polycrystalline CVD graphene on 300 mm wafers has been demonstrated, showing more than 95% monolayer uniformity [17].…”