Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM

Nguyen, Dong; Irom, F.

doi:10.1109/redw.2007.4342564

Cited by 13 publications

(4 citation statements)

References 7 publications

(7 reference statements)

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“…[2][3][4]. Errors are randomly distributed across the tested part of the array, as determined based on scrambling information on the physical bit mapping.…”

Section: A Rough Bit Errorsmentioning

confidence: 99%

“…In space, small-size non-volatile memories are used mainly for code storage [1], but the high information density available in the most advanced commercial devices makes them of great interest for other applications, traditionally reserved to DRAMs, such as solid state data recorders [2]. To reliably use a non-volatile memory for data storage, an estimation of its reliability in a radiation harsh environment is needed.…”

Section: Introductionmentioning

confidence: 99%

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Error Instability in Floating Gate Flash Memories Exposed to TID

Bagatin

Gerardin

Cellere

et al. 2009

IEEE Trans. Nucl. Sci.

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We discuss new experimental results on the post-radiation annealing of Floating Gate errors in Flash memories with both NAND and NOR architecture. We investigate the dependence of annealing on the program level, linking the reduction in the number of Floating Gate errors to the evolution of the threshold voltage of each single cell. To understand the underlying physics we also discuss how temperature affects the number of Floating Gate errors

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“…[2][3][4]. Errors are randomly distributed across the tested part of the array, as determined based on scrambling information on the physical bit mapping.…”

Section: A Rough Bit Errorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Error Instability in Floating Gate Flash Memories Exposed to TID

Bagatin

Gerardin

Cellere

et al. 2009

IEEE Trans. Nucl. Sci.

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“…Recent radiation hardness studies on flash memory imply a TID hardness limited to 10-15 krad(Si) [4]- [6], [13]- [17]. While substantial research has been carried out on radiation effects in FeRAMs [18], [19], MRAMs [20], [21], and PCRAMs [22], [23], only a few reports on radiation response of ReRAM devices have been published. These include studies on TiO -based memristors [24] and our recent work on Cu-doped-HfO ReRAMs [12], [25].…”

Section: Introductionmentioning

confidence: 99%

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Wang

Butcher

et al. 2012

IEEE Trans. Nucl. Sci.

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Resistive switching properties of valence change memory (VCM) resistive-random-access-memory (ReRAM) devices (TiN/HfO /TiN) are investigated after exposure to proton radiation with total ionizing doses (TID) of 1.5, 3, and 5 Grad(Si) and compared to similar measurements from electrochemical metallization memory (ECM) ReRAM devices (Pt/HfO :Cu/Cu). The TiN/HfO /TiN ReRAMs show significantly superior TID radiation-hardness compared to Pt/HfO :Cu/Cu ReRAMs: 1) All devices remained functional after radiation; 2) switching parameters including average , , , showed minimal or no degradation; and 3) TID radiation enhanced the uniformity of resistive switching among all VCM devices. The superior radiation responses of the VCM ReRAM devices relative to ECM ReRAMs result from the distinct conduction filament (CF) formation mechanisms. For the VCM ReRAM system, the radiation-induced vacancy density does not serve to inhibit the trap-assisted tunneling associated with the Hf-rich CF formation kinetics. On the contrary, vacancy-promoted charge trapping promotes VCM CF stability. In strong contrast, proton-induced vacancies for the ECM ReRAMs inhibit the formation of the metallic filament through internal field reduction due to charge trapping. The comparison of TID effects suggests that HfO -based VCM ReRAMs can be made radiation immune to a TID up to 5 Grad(Si) and may be highly suitable for rad-hard electronics applications.Index Terms-Hafnium oxide, rad-hard, resistive switching, total ionizing dose.

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“…In the current literature, almost all the existing irradiated-NVM research focuses on Si flash [1][2][3][4][5][6][7][8] and emerging memory devices other than ReRAM, such as ferroelectric RAM [9,10], magneto-resistive RAM [11,4], and phase-change RAM [12]. ReRAM devices are noted to have a different switching mechanism from the aforementioned devices.…”

Section: Introductionmentioning

confidence: 99%

Proton-based total-dose irradiation effects on Cu/HfO₂:Cu/Pt ReRAM devices

Butcher

Huang

et al. 2010

Nanotechnology

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The resistive switching properties of Cu-doped-HfO(2)-based resistive-random-access-memory (ReRAM) devices are investigated under proton-based irradiations with different high-range total doses of 1.5, 3 and 5 Giga-rad[Si]. The measurement results obtained immediately after irradiation demonstrate that the proton-based total dose will introduce significant variations in the operation voltages and resistance values. These effects are enhanced almost linearly when the dose increases from 1.5 to 5 Giga-rad[Si]. Furthermore, five days after irradiation, the electrical properties of the device rebound, resulting in reduced operation voltages and resistance values. This is consistent with the time-dependent super-recovery behavior observed previously in CMOS gate oxide. These results can be explained by the proton irradiation effect on the electron/hole trap density inside HfO(2) and its impact on ReRAM device metallic filament formation-and-rupture, which is based on electrolyte theory.

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Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM

Abstract: -We report on TID tests of Magnetoresistive Random Access Memory (MRAM), and advanced 4Gbit flash memories from three manufacturers. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures.

Cited by 13 publications

References 7 publications

Error Instability in Floating Gate Flash Memories Exposed to TID

Error Instability in Floating Gate Flash Memories Exposed to TID

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Proton-based total-dose irradiation effects on Cu/HfO₂:Cu/Pt ReRAM devices

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Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM

Abstract: -We report on TID tests of Magnetoresistive Random Access Memory (MRAM), and advanced 4Gbit flash memories from three manufacturers. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures.

Cited by 13 publications

References 7 publications

Error Instability in Floating Gate Flash Memories Exposed to TID

Error Instability in Floating Gate Flash Memories Exposed to TID

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices

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Product

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Proton-based total-dose irradiation effects on Cu/HfO₂:Cu/Pt ReRAM devices