Total Ionizing Dose Radiation Test on the Temperature Sensor TMP36 from Analog Devices

Álvarez, M.; Jiménez, Juan J.; González-Guerrero, Miguel; Hernando, Carlos; Guerrero, H.

doi:10.1109/redw.2012.6353709

Cited by 3 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, sensors are often used in extreme conditions of increased level of ionized radiation, near nuclear reactors [19], in elementary particle accelerators [20], in the upper layers of atmosphere [7] and in outer space [21]. It is well known that ionizing radiation fundamentally changes the electrical properties of any sensitive structures [22,23], and for sensors that are exposed to radiation, special methods are needed to compensate for such effects [21]. However, neither new designs of sensors, nor the latest materials and components of sensors are practically studied from the point of view of the influence of ionizing radiation.…”

Section: Introductionmentioning

confidence: 99%

Detectors Based on Field Effect Transistors

Vikulin¹,

Vikulina

М.

et al. 2021

Photo

View full text Add to dashboard Cite

The possibility of using the method of combining several sensor elements with opposite sensitivity to various external influences to obtain new designs of sensors for light, temperature and magnetic field has been experimentally investigated. Standard industrial samples of FEJT and a MOSFET in saturation mode with two-pole connection, when the gate is closed with the source, were used as sensor elements in the work. It is shown that the FEJT has a negative temperature coefficient of current change, while the MOSFET has a positive one. At the same time, the sign of the radiative action factor of the MOSFET is determined by the initial value of the drain current before irradiation. It has been experimentally confirmed that the use of four transistors in a bridge measurement circuit increases the sensitivity of the sensor tenfold compared to one transistor due to the internal mechanism of increasing the sensitivity for series-connected pairs of transistors.

show abstract