Detectors Based on Field Effect Transistors

Abstract

The possibility of using the method of combining several sensor elements with opposite sensitivity to various external influences to obtain new designs of sensors for light, temperature and magnetic field has been experimentally investigated. Standard industrial samples of FEJT and a MOSFET in saturation mode with two-pole connection, when the gate is closed with the source, were used as sensor elements in the work. It is shown that the FEJT has a negative temperature coefficient of current change, while the MOSFET has a positive one. At the same time, the sign of the radiative action factor of the MOSFET is determined by the initial value of the drain current before irradiation. It has been experimentally confirmed that the use of four transistors in a bridge measurement circuit increases the sensitivity of the sensor tenfold compared to one transistor due to the internal mechanism of increasing the sensitivity for series-connected pairs of transistors.