2014 IEEE Radiation Effects Data Workshop (REDW) 2014
DOI: 10.1109/redw.2014.7004606
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Total Ionizing Dose Characterization of 65 nm Flash-Based FPGA

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Cited by 18 publications
(5 citation statements)
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“…Otherwise, the IMU is considered to have failed. Similarly, the probability of failure can be calculated for other components, such as the power-switching circuit, lithium-ion battery [34], GPS sensor module, vision SoC module, mmWave radar module, and filter DSP hardware [35,36].…”
Section: Modeling Kalman Filter Software Failures Using Dual-graph Er...mentioning
confidence: 99%
“…Otherwise, the IMU is considered to have failed. Similarly, the probability of failure can be calculated for other components, such as the power-switching circuit, lithium-ion battery [34], GPS sensor module, vision SoC module, mmWave radar module, and filter DSP hardware [35,36].…”
Section: Modeling Kalman Filter Software Failures Using Dual-graph Er...mentioning
confidence: 99%
“…A flash-based Microsemi Igloo2 FPGA was selected for this, being the first 68nm Flash-based device with integrated SERDES. CERN has positive experiences with this technology in front-end systems and the initial irradiation tests are showing promising results [15].…”
Section: Gbt Optical Link At 48 Gbpsmentioning
confidence: 99%
“…The effects of Total Ionizing Dose (TID) in FPGAs have been widely studied in the scientific literature [ 9 , 10 ]. TID effects are typically studied in circuits where for a given particular input, the output is always the same (deterministic logic).…”
Section: Introductionmentioning
confidence: 99%
“…In flash-based FPGAs, the TID effects at device level are focused on the floating gate and CMOS transistors. The floating gate can be affected by three different radiation-induced phenomena which reduce its threshold voltage: holes injected into the floating gate, holes trapped into the oxides and electrons emitted over the polysilicon/oxide barriers [ 9 ]. Regarding the CMOS transistors, it is necessary to distinguish between NMOS and PMOS transistors.…”
Section: Introductionmentioning
confidence: 99%