Total Electron Yield Ratios between Sample Components in Total-Electron-Yield Soft X-ray Absorption Spectroscopy

Muramatsu, Yasuji; Gullikson, Eric M.

doi:10.2116/bunsekikagaku.59.455

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…The atomic ratios of B/C can be estimated by comparing the absorption peak heights between the BK and CK regions. In the TEY-XAS measurements, the TEY efficiency of B is typically higher than that of C, 22 as clearly shown in the spectrum of B 4 C. Although the atomic ratio of B/C is 4 in B 4 C, the absorption peak height ratio of Br*/ Cr* is 11.2 (¼ 0.73/0.065). Therefore, the TEY efficiency ratio of B/C is 2.8 (¼ 11.2/4).…”

Section: Resultsmentioning

confidence: 93%

Local structure analysis of boron-doped graphite by soft x-ray emission and absorption spectroscopy using synchrotron radiation

Hanafusa¹,

Muramatsu²,

Kaburagi³

et al. 2011

Journal of Applied Physics

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The local structure of boron-doped highly oriented graphite films was determined via soft x-ray emission and absorption spectroscopy using synchrotron radiation. Analysis of the BK and CK x-ray emission spectra using the discrete variational-Xa molecular orbital method clarified that boron atoms are chemisorbed onto graphite by substituting for carbon atoms in the carbon hexagonal rings. Compared to graphite, boron-doped graphite exhibits spectral differences in the higher edge of the CK x-ray emission spectrum and the CK x-ray absorption edge. Such a spectral profile of boron-doped graphite, which reflects the band structure, is well explained by the chemisorbed boron structure. V

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Section: Resultsmentioning

confidence: 93%

Local structure analysis of boron-doped graphite by soft x-ray emission and absorption spectroscopy using synchrotron radiation

Hanafusa¹,

Muramatsu²,

Kaburagi³

et al. 2011

Journal of Applied Physics

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“…The amount of the sp 2 -BN phase in the top layer is not clear at present because the sensitivity of Ã and Ã peaks for BN films has to be taken into account. Muramatsu and Gullikson 20) reported in their NEXAFS measurements of carbon that the sensitivity of the Ã peak is much larger than that of the Ã peak. The sensitivity of the Ã peak can also be larger than that of the Ã peak for B and N spectra.…”

Section: Growth Process Of Films Containing Sp 3 -Bn Phasementioning

confidence: 98%

X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature

Hori

Niibe

Kotaka

et al. 2013

Jpn. J. Appl. Phys.

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We have investigated the effects of bias voltage and substrate temperature on the growth process of RF-magnetron-sputtered BN films. When the negative bias voltage was higher than 80 V, films including the sp 3 -BN phase grew even if the substrate temperature was RT. When the substrate temperature and the negative bias voltage were 600 C and >100 V, respectively, films containing more than 90% sp 3 -BN phase were grown. The growth process of films deposited at 150 and 600 C under a constant bias voltage of À100 V was studied by Near edge X-ray absorption fine structure (NEXAFS) measurements. These films consisted of two layers: an sp 2 -BN phase underlayer and an sp 3 -BN phase top layer. The sp 2 -BN underlayer had a preferential orientation of the c-axis parallel to the film surface. The thickness of the sp 2 -BN underlayer decreased with increasing substrate temperature. High substrate temperatures assisted the nucleation and growth of the sp 3 -BN phase.

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Total Electron Yield Ratios between Sample Components in Total-Electron-Yield Soft X-ray Absorption Spectroscopy

Cited by 2 publications

References 3 publications

Local structure analysis of boron-doped graphite by soft x-ray emission and absorption spectroscopy using synchrotron radiation

Local structure analysis of boron-doped graphite by soft x-ray emission and absorption spectroscopy using synchrotron radiation

X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature

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