Total-Dose Effect of X-ray Irradiation on Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Tai, Ya‐Hsiang; Yeh, Syh‐Shiuh; Huang, Shu-Hsien; Chang, Ting‐Chang

doi:10.1109/led.2020.2988879

Cited by 7 publications

(4 citation statements)

References 16 publications

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“…Among them, a-Si TFTs have been widely used for flat-panel X-ray detectors; however, they suffer from low carrier mobility, thereby necessitating a large TFT with a large parasitic data line capacitance, which increases electronic noise and reduces the pixel fill factor. , The carrier mobility of the LTPS TFT is approximately 100 times higher than that of the a-Si TFTs; therefore, their use increases the pixel fill factor. However, LTPS TFTs exhibited a large degradation of the device performance in terms of threshold voltage ( V TH ) and subthreshold swing ( SS ) even under X-ray irradiation with low total doses of 0.87–4.35 Gy ascribed to the permanent damage to the crystalline structure of LTPS induced by X-ray radiation. − Recently, oxide TFTs have attracted considerable attention as backplanes for various flat-panel displays owing to their high carrier mobility, low processing temperature, and high uniformity. − Till date, only a few studies have examined the radiation tolerance of n-type oxide TFTs under X-ray irradiation. − However, the research results on the effects of X-ray irradiation on p-type oxide TFTs and oxide-TFT-based complementary metal–oxide–semiconductor (CMOS) logic circuits have not yet been reported. CMOS logic circuits using both n-type and p-type transistors exhibit rail-to-rail output voltage swings and high noise margins; , therefore, they can enhance the electrical performance of digital systems compared with n-type logic circuits.…”

Section: Introductionmentioning

confidence: 99%

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Yatsu

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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A radiation-hard oxide-thin-film transistor (TFT)-based complementary metal–oxide–semiconductor (CMOS) logic circuit composed of p-type tin oxide (SnO X ) and n-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was proposed. The chemical states and crystalline structure of oxide thin films and their surface morphologies were analyzed as a function of the X-ray irradiation dose, exhibiting excellent radiation stability and durability for both oxide thin films under X-ray irradiation. After X-ray irradiation at a very high dose, a slight change in the chemical states was observed in both thin films, that is, an increase in the oxygen vacancies and tin dioxide components in the SnO X thin films and in the oxygen vacancy components in the IGZO thin films. The change in the chemical states observed in both thin films after X-ray irradiation explained the slight X-ray-induced negative shift of the transfer curves for both oxide TFTs. The fabricated CMOS inverter exhibited typical voltage transfer characteristics and a maximum gain of ∼33.4 V/V at a supply voltage of 10 V, which were well sustained after X-ray irradiation, even at a high dose of 100 Gy. In this study, we show that oxide-TFT-based CMOS logic circuits can potentially be used to demonstrate high-performance and radiation-robust large-area electronic systems operating in harsh X-ray environments.

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Section: Introductionmentioning

confidence: 99%

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Yatsu

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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“…Furthermore, we perform the same data processing with the other results, and it reveals that the current of excited behavior exhibits the trend of decrease from cycle to cycle. We believe that the main reason for this situation is based on the length of irradiated time and the accumulated dose [18]. The damage to LTPS TFTs by x-ray irradiation does not linearly accumulate.…”

Section: The Excited Behaviormentioning

confidence: 99%

The time response for the low-temperature poly-silicon thin-film transistors to x-ray irradiation pulse

Tai¹,

Yeh²,

Chen³

et al. 2021

Semicond. Sci. Technol.

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In this study, the time response behavior of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) to x-ray irradiation pulses with different frequencies is analyzed. The formulas for the time response of excited and recovery behaviors are proposed for possible use in circuit performance enhancement in real x-ray irradiation situations. The predicted and measured results fit fairly well, which is important in the development of x-ray image sensors using LTPS TFTs.

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“…Additionally, their ability to be used as dosimeters of X rays has not been investigated, to our knowledge. X-rays are much more complex and complicated than gamma rays [25] because they are polyenergetic, but the transistor responses are highly dependent on energy from the X-ray spectrum. Many laboratories do not have an X spectrometer but use mean energy and/or a half-value layer as X-beam parameter(s).…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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Total-Dose Effect of X-ray Irradiation on Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Cited by 7 publications

References 16 publications

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

The time response for the low-temperature poly-silicon thin-film transistors to x-ray irradiation pulse

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

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