Total and partial atomic-level widths

Keski-Rahkonen, Olavi; Krause, Manfred O.

doi:10.1016/s0092-640x(74)80020-3

Cited by 431 publications

(145 citation statements)

References 21 publications

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“…34 We use the Poissonian distribution to model the Auger decay with an average decay time of 8 fs. 34 When the K-shell hole relaxes during an Auger process, one electron is additionally promoted from the valence band into high-energy states of the conduction band, leaving another hole in the valence band. The energy level of the valence band, from which the Auger electron was taken, is chosen randomly.…”

Section: A Monte Carlo Modeling Of Photons High-energy Electrons Amentioning

confidence: 99%

“…The deep-shell holes can then decay through Auger processes, which are the dominant relaxation channel for low-Z (light) elements. 34 The Auger decay gives rise to one more electronic excitation from the valence band to the conduction band, following the relaxation of the K-shell hole into the valence band. The released photo-and Auger electrons scatter further via inelastic channels (impact ionization of valence-band or deep-shell electrons of the material) or elastic channels (scattering on atoms or phonons).…”

Section: Introductionmentioning

confidence: 99%

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Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

2013

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Diamond irradiated with an ultrashort intense laser pulse in the regime of photon energies from soft up to hard x rays can undergo a phase transition to graphite. This transition is induced by an excitation of electrons from the valence band or from atomic deep shells of the material into its conduction band, which is followed by a transient rapid change of the interatomic potential. Such a nonthermal phase transition occurs on a femtosecond time scale, shortly after or even during the laser pulse. In this work we show that the duration of the graphitization depends on the incoming photon energy: the higher the photon energy is, the longer the secondary electron cascading which promotes the electrons into the conduction band will take. The transient kinetics of the electronic and atomic processes during the graphitization is analyzed in detail. The damage threshold fluence is calculated in the broad photon energy range and is found to be always ∼0.7 eV/atom in terms of the average dose absorbed per atom. It is confirmed that the temporal characteristics of a femtosecond laser pulse (at a fixed pulse duration and fluence) do not significantly influence the transient damage kinetics. Finally, the influence of an additional surface layer of high-Z material on the damage within diamond is discussed.

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Section: A Monte Carlo Modeling Of Photons High-energy Electrons Amentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

2013

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“…For Auger-like processes within the valence band (the Coster-Kronig transitions), the exponential law for the decay time can be applied with characteristic times assumed to be equal to those obtained in [53]. The DOS and Pauli's principle are taken into account in the same way as for the electron impact ionization process.…”

Section: Modelling Of Secondary Processesmentioning

confidence: 99%

“…The Auger decay of holes in the L-shell has characteristic times typically around 10 fs (for light elements [53]). Therefore, L-shell photoionization leads to only a short delay in high-energy electron production, which occurs in two steps.…”

Section: Dependence Of Eeg On Fluencementioning

confidence: 99%

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Medvedev¹,

Rethfeld²

2010

New J. Phys.

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Abstract. The irradiation of semiconductors with ultrashort laser pulses causes excitation of electrons from bound states (the valence band and deep atomic shells) to the conduction band, which produces non-equilibrium highly energetic free electrons. We apply a Monte-Carlo simulation technique to study the ionization and excitation of the electronic subsystem of a solid silicon target irradiated with a femtosecond laser pulse, obtaining the transient distribution of electrons within the conduction band. We take into account the electronic band structure and Pauli's principle for excited electrons. Secondary excitation and ionization processes induced by electrons in the conduction band and holes in the valence band were also included and simulated event by event. The temporal distributions of the density and the energy of excited electrons are calculated and discussed. We demonstrate that, due to the energy used to overcome the ionization potential, the final kinetic energy of the free electrons is significantly less than the total energy provided by the laser pulse. We extend the concept of an 'effective energy gap' for multiple electronic excitations, which can be applied to estimate the free-electron density after high-intensity vacuum ultraviolet (VUV) laser pulse irradiation. The effective energy gap depends on both the properties of the material and the laser pulse parameters. The concept provides a fundamental understanding of the experimentally accessible pair creation energy measured in the limit of long times.

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“…The excitation energy E of the state Ie is the photon energy in (1) or the electron energy loss in (2). The wavelength spread A1 in (1) corresponds to an energy width A E given by…”

mentioning

confidence: 99%

Inner Shell Excitation of Atoms and Molecules by Electron Impact With High Energy Resolution

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1978

J. Phys. Colloques

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Total and partial atomic-level widths

Cited by 431 publications

References 21 publications

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Inner Shell Excitation of Atoms and Molecules by Electron Impact With High Energy Resolution

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