Topology of Silicon Structures with Recessed SiO2

Bassous, E.; Yu, Hsing-Tse; Maniscalco, V.

doi:10.1149/1.2132680

Cited by 109 publications

(44 citation statements)

References 11 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…similar to fully recessed LOCOS. 21 After removal of the nitride cap and some oxide by wet chemical etches, the submicrometer rounded silicon top is exposed, as shown by atomic force microscopy ͑AFM͒ ͓see Fig. 3͑c͔͒.…”

Section: Fig 1 Schematic Of Tip-sample Configuration Used For Sf-stmentioning

confidence: 99%

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

Marun

Jansen

2009

Journal of Applied Physics

View full text Add to dashboard Cite

We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin polarization using spin-dependent transmission in the probe tip. We report the fabrication of the probes having a submicron semiconductor/ferromagnet heterostructure at the end of the tip.The continuous reduction in critical feature sizes in both magnetic data storage and semiconductor technologies requires characterization techniques with ever higher spatial resolution. The emerging field of spintronics 1 also requires appropriate techniques to study spin-related phenomena in magnetic nanostructures. 2 Scanning probe techniques 3 such as magnetic force microscopy ͑MFM͒ and spin-polarized scanning tunneling microscopy ͑SP-STM͒ are frequently employed. MFM is versatile because it does not require ultraclean nor conducting samples. However, as it relies on magnetic stray fields, the data interpretation are not always straightforward, while the typical best resolution is limited at around 20 nm, 4,5 which is close to the critical feature size in magnetic nanostructures.SP-STM is a powerful technique in terms of the wealth of electronic information it provides, including the position of exchange-split features in the local density of states ͑LDOS͒, 6 and has proven capable of the ultimate resolution by imaging magnets at the atomic scale. 7,8 SP-STM is usually performed in the differential conductivity mode 6 where its need for exchange-split states to produce strong features in the LDOS, low temperatures, and its spectroscopic nature limits its applicability and makes the extraction of quantitative magnetic information more difficult. To obtain the sample tunneling spin polarization ͑TSP͒ with SP-STM, one must know the corresponding TSP of the last atoms of the tip ͑magnitude and direction͒, which may not be a trivial matter. Thus, it would be highly desirable to have a technique capable of measuring directly and quantitatively the sample spin polarization at Fermi level and with atomic resolution. This is of importance for assessing spin transport in new materials and devices. 9 Here we propose a novel technique, namely, spin-filter scanning tunneling microscopy ͑SF-STM͒. As in SP-STM, this new technique relies on spin-polarized tunneling between tip and sample to extract magnetic information from surfaces. The difference is that in SF-STM, the spin analysis occurs within the tip in a semiconductor/ferromagnet heterostructure-after tunneling. The novel tip design consists of a top metallic surface where tunneling takes place, followed by a semiconductor/ferromagnet heterostructure in which transmission is spin dependent ͑see Fig. 1͒. There are two separate contacts to the tip, one to the metallic surface, the other to the semiconductor. Magnetic contrast is provided by the dc measurement of the current collected in the sem...

show abstract

Section: Fig 1 Schematic Of Tip-sample Configuration Used For Sf-stmentioning

confidence: 99%

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

Marun

Jansen

2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4] For fabrication of high density nanostructures over a large area, we have proposed and experimentally studied a new method, a nanometer-scale local oxidation of Si ͑LOCOS͒, using silicon nitride ͑SiN͒ islands formed by thermal nitridation. Conventional LOCOS has been one of the most important processes in LSI fabrication, 6 where SiN regions work as oxidation masks due to extremely slow oxygen diffusion in SiN. The nanometer-scale LOCOS proposed is based on the same idea as the conventional one and consists of the following steps; first, SiN islands are formed without lithography in the early stages of thermal nitridation in vacuum with N 2 , and then the nitrided surface is oxidized also in vacuum without exposing the sample to the air.…”

Section: And Takeshi Yamamotomentioning

confidence: 99%

Nanometer-scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation

Tabe

Yamamoto

1996

Applied Physics Letters

View full text Add to dashboard Cite

We have studied the silicon nitride (SiN) nucleation on the Si(111) 7×7 surface due to thermal nitridation with scanning tunneling microscopy (STM), and applied the resultant small SiN islands to oxidation masks in local oxidation of Si (LOCOS) process for fabrication of nanometer-scale Si structures. The nitrides appear as dark regions in STM images and the average size increases (the density decreases) with increasing nitridation temperature. When the nitrided surface is successively oxidized in the etching mode with a reaction of Si+O2→SiO↑, the nitrides turn to bright regions by selective etching of the clean 7×7 regions and the brightness (height) increases with increasing etching time. Thus, the microscopic LOCOS process is demonstrated and nanometer-scale Si pillars are fabricated.

show abstract

“…The diffusion constant in equation I increases as a function of temperature. In addition to the problem just mentioned, high temperature oxidation also causes surface depletion of impurities [2], oxidation enhanced diffusion [3) oxidation induced stacking faults [3,41 and so-called bird's beaking [5] Plasma assisted oxidation offers the potential for oxide formation at temperatures below 800C free from the problems described above, with the possible additional benefits of being orientation and resistivity, and resistivity type independent [6,7].…”

Section: Introductionmentioning

confidence: 99%

Plasma Assisted Oxidation of Si at Temperatures below 800°C

Williams

Reismanu

1986

MRS Proc.

View full text Add to dashboard Cite

A system for plasma assisted oxidation of Si at temperatures below 800°C is described. Oxides grown in this system have an unusual thickness versus time relationship. The first 110 nm of oxide exhibit a t 1 1 2 dependence. Any additional growth shows a t 1 13 dependence. Pressure, oxygen concentration, and rf power are all important parameters in determining the growth rate and uniformity of the oxide layers. Breakdown measurements on these oxide layers show that post oxidation annealing is necessary if these oxides are to compete with thermal oxides. The type of annealing is very important in determining the breakdown voltage. The results of various annealing procedures are described. The effects of heating the wafers independent of the heat generated by the plasma, and the frequency dependence of the growth are discussed.

show abstract

Topology of Silicon Structures with Recessed SiO2

Cited by 109 publications

References 11 publications

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

Nanometer-scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation

Plasma Assisted Oxidation of Si at Temperatures below 800°C

Contact Info

Product

Resources

About