Topology analysis for anomalous Hall effect in the noncollinear antiferromagnetic states of 
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Huyen, Vu Thi Ngoc; Suzuki, Michi To; Yamauchi, Kunihiko; Oguchi, Tamio

doi:10.1103/physrevb.100.094426

Cited by 63 publications

(36 citation statements)

References 38 publications

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“…Our previous studies demonstrated that the electrical switching of H ex is realized in antiperovskite nitride AFM-Mn 3 GaN/FM-Co 3 FeN (001) bilayers with a current density of 1 × 10 6 A/cm 2 , which is two orders of magnitude smaller than typical FM cases 39 . Towards further understanding, we introduce that the noncollinear AFM antiperovskite manganese nitride Mn 3 AN may be a good platform because the AFM magnetic properties, such as the Mn local moment and AFM spin structure (Γ 4g and Γ 5g ), depend on the A atom [40][41][42] .…”

Section: Introductionmentioning

confidence: 99%

Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

2020

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While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field (Hex) in AFM-Mn3AN/ferromagnet-Co3FeN bilayers. An applied pulse current can manipulate Hex with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant τ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of Hex, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.

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Section: Introductionmentioning

confidence: 99%

Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

2020

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“…Recently, the AHE has been predicted theoretically and confirmed experimentally in Mn based antiperovskite nitrides with the Γ 4g AFM order [29,[57][58][59][60]. Due to the AHC being odd with respect to the time reversal symmetry operation, reversal of the AFM order in the Γ 4g type antiperovskites is expected to change sign of the AHE (Fig.…”

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confidence: 88%

Spin-torque switching of noncollinear antiferromagnetic antiperovskites

2020

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Antiferromagnetic (AFM) spintronics exploits the Néel vector as a state variable for novel electronic devices. Recent studies have demonstrated that the Néel vector can be switched by a spin-orbit torque. These studies however are largely limited to collinear antiferromagnets of proper magnetic space group symmetry. There is, however, a large group of high-temperature noncollinear antiferromagnets, which are suitable for such switching. Here, we predict that spin torque can be efficiently used to switch a noncollinear AFM order in antiperovskite materials. Based on first-principles calculations and atomistic spin-dynamics modeling, we show that in antiperovskites ANMn 3 (A = Ga, Ni, etc.) with the AFM Γ 4g ground state, the AFM order can be switched on the picosecond time scale using a spin torque generated by a spin current. The threshold switching current density can be tuned by the ANMn 3 stoichiometry engineering, changing the magnetocrystalline anisotropy. The Γ 4g AFM phase supports a sizable anomalous Hall effect, which can be used to detect the spin-torque switching of the AFM order. The predicted ultrafast switching dynamics and the efficient detection of the AFM order state make noncollinear magnetic antiperovskites a promising material platform for AFM spintronics.

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“…), the Mn atoms form a kagome lattice in the (111) plane. The noncollinear AFM Mn 3 AN with a nonzero Berry curvature has been predicted to exhibit a large anomalous Hall effect (AHE) and an anomalous Nernst effect even with a quite small canted magnetization of the order of 0.001-0.01 µ B per atom [15][16][17]. The AHE has been established in Mn 3 Ni 1−x Cu x N films [18,19], strained Mn 3 NiN films [20], and strained Mn 3 SnN films [21].…”

Section: Introductionmentioning

confidence: 97%

Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN

Hajiri,

Matsuura,

Sonoda

et al. 2021

Preprint

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Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the triangular magnetic configuration, spin-orbit torque switching with no external magnetic field is demonstrated in noncollinear antiferromagnetic antiperovskite manganese nitride Mn3GaN at room temperature. The pulse-width dependence and subsequent relaxation of Hall signal behavior indicate that the spin-orbit torque plays a more important role than the thermal contribution due to pulse injection. In addition, multistate memristive switching with respect to pulse current density was observed. The findings advance the effective control of noncollinear antiferromagnetic spin, facilitating the use of such materials in antiferromagnetic spintronics and neuromorphic computing applications.

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Topology analysis for anomalous Hall effect in the noncollinear antiferromagnetic states of Mn3AN (A=Ni, Cu,

Cited by 63 publications

References 38 publications

Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

Spin-torque switching of noncollinear antiferromagnetic antiperovskites

Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN

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