Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

Hajiri, Tetsuya; Goto, Hidetoshi; Asano, Hidefumi

doi:10.1103/physrevb.102.014404

Cited by 5 publications

(3 citation statements)

References 63 publications

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“…The coexistence of Γ 5g and M-1 phase below the FM-like transition temperature has also been previously reported [28]. As the MGN/FM bilayers exhibit an exchange bias at 4 K [29], it is concluded that Γ 5g order and M-1 phase coexist below 200 K.…”

Section: A Film Characteristics and Magnetotransport Propertiessupporting

confidence: 82%

Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN

Hajiri,

Matsuura,

Sonoda

et al. 2021

Preprint

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Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the triangular magnetic configuration, spin-orbit torque switching with no external magnetic field is demonstrated in noncollinear antiferromagnetic antiperovskite manganese nitride Mn3GaN at room temperature. The pulse-width dependence and subsequent relaxation of Hall signal behavior indicate that the spin-orbit torque plays a more important role than the thermal contribution due to pulse injection. In addition, multistate memristive switching with respect to pulse current density was observed. The findings advance the effective control of noncollinear antiferromagnetic spin, facilitating the use of such materials in antiferromagnetic spintronics and neuromorphic computing applications.

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Section: A Film Characteristics and Magnetotransport Propertiessupporting

confidence: 82%

Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN

Hajiri,

Matsuura,

Sonoda

et al. 2021

Preprint

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“… [135] in Pt/IrMn/CoFeB, which can be proposed in IMA-MTJs. Subsequently, many efforts have been made to electrically control EB fields in other structures such as IrMn/NiFe [136] , Pt/Co/NiO [137] , and AFM-Mn 3 AN/FM-Co 3 FeN bilayers [138] . Moreover, all-optical control of the magnetization and EB fields in IrMn/[Co/Pt]xN heterojunctions was realized by Vallobra et al.…”

Section: The Birth Of Next-generation Afm-based Devicementioning

confidence: 99%

Antiferromagnetic spintronics: An overview and outlook

Xiong

Jiang

Shi

et al. 2022

Fundamental Research

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“…It has already been established that AFM systems exhibit several exotic quantum phenomena, replacing the traditional FM samples, like spin Seebeck effect [30], spin Hall effect [31][32][33][34], spin filtration [35], spin transfer torque [36,37], high frequency dynamics [23,24,38], memory applications [22], and to name a few [39][40][41][42][43][44][45][46][47]. Considering these phenomena, a question arises that can we also establish spin dependent circular current [48][49][50][51][52][53], another novel aspect in nanoscale, in a magnetic conducting ring possessing 'vanishing net magnetization' and even when there is no spin chirality.…”

Section: Introductionmentioning

confidence: 99%

Generation of circular spin current in an AB magnetic ring with vanishing net magnetization: a new prescription

Koley¹,

Maiti²

2021

J. Phys.: Condens. Matter

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In this work we report for the first time the appearance of non-decaying circular spin current in a magnetic ring with vanishing net magnetization, even in absence of any spin chirality. Breaking the symmetry in hopping integrals we can misalign up and down spin electronic energy levels which yields a net spin current in the magnetic quantum ring, threaded by an Aharonov–Bohm flux. Along with spin current, a net charge current also appears, and we compute both these currents using the second quantized approach. A tight-binding framework is employed to describe the magnetic ring where each site of the ring contains a finite magnetic moment. Itinerant electrons get scattered from the localized magnetic moments at different lattice sites, and the moments are arranged in such a way that the net magnetization vanishes. The interplay between magnetic moments and asymmetric hopping integrals leads to several atypical features in energy spectra, especially the existence of vanishing current carrying energy eigenstates together with the current carrying ones. The formation of such states those do not contribute any current is the artifact of different kinds of on-site energies and/or hopping integrals in different segments of the magnetic ring. The atypical signatures of energy levels are directly reflected into the charge and spin currents, and here we critically investigate the behaviors of circular currents as functions of electron filling, hopping integrals, strength of spin-moment interaction and ring size. Finally, we discuss briefly the possible experimental realization to implement our proposed magnetic system. The present analysis may provide a new route of generating persistent spin current in magnetic quantum rings with vanishing net magnetization, circumventing the use of spin–orbit coupled systems.

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Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

Cited by 5 publications

References 63 publications

Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN

Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn$_3$GaN

Antiferromagnetic spintronics: An overview and outlook

Generation of circular spin current in an AB magnetic ring with vanishing net magnetization: a new prescription

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