Topological insulator nanostructures

Judy, J.; Koski, Kristie J.; Cui, Yi

doi:10.1002/pssr.201206393

Cited by 76 publications

(71 citation statements)

References 112 publications

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“…However, TI materials or devices are prone to surface degradation affecting the mobility and very few reports demonstrated clear quantum oscillations so far, hence, more careful studies need to be carried out [30].…”

Section: Resultsmentioning

confidence: 99%

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Bhattacharyya¹,

Sharma

Awana

et al. 2017

J. Phys.: Condens. Matter

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Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi 2 Se 3 nanowire formation from deposited flakes using ion beam milling method. The fabricated Bi 2 Se 3 nanowire devices have been employed to investigate the robustness of topological surface state (TSS) to gallium ion doping and any deformation in the material due to fabrication tools. We report the quantum oscillations in magnetoresistance curves under the parallel magnetic field. The resistance versus magnetic field curves have been studied and compared with Aharonov-Bohm (AB) interference effects which further demonstrate the transport through TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations and can be exploited further in studying the exotic electronic properties associated with TI based nanodevices.

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Section: Resultsmentioning

confidence: 99%

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Bhattacharyya¹,

Sharma

Awana

et al. 2017

J. Phys.: Condens. Matter

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“…Five experimental papers [1][2][3][4][5] overview the recent status and challenges of TI nanostructures [1], magnetotransport and induced superconductivity [2], chemistry of Bi-based TI materials [3], molecular beam epitaxial growth of TI thin films [4], and angle-resolved photoemission spectroscopy (ARPES) with circular dichroism [5]. On the other hand, five theoretical papers [6][7][8][9][10] report the progress from different perspectives: materials design by firstprinciples calculations [6,7], the relations between TIs and thermoelectric materials [8], Floquet TIs [9], and the classification of topological states [10].…”

Section: Topological Insulatorsfrom Materials Design To Realitymentioning

confidence: 99%

“…Five experimental papers [1][2][3][4][5] We present ten Letters that cover various aspects, ranging from ARPES, transport measurement and devices, thin film growth to first-principles simulations and fundamental theory. Letters on ARPES [11][12][13][14] [18] shows the dependence of edge state dispersion on edge geometry of graphene.…”

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confidence: 99%

Topological Insulators – From Materials Design to Reality

Yan

Felser

Zhang³

2013

Physica Rapid Research Ltrs

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Topological insulators (TIs) are a new quantum state of matter discovered in recent years. They are beyond the spontaneous symmetry-breaking description by Landau and are instead characterized by topological invariants, and described by topological field theory. Their topological nature is similar to the quantum Hall effect, a major discovery of condensed-matter physics in the 1980s (Klaus von Klitzing, Nobel Prize in Physics, 1985). The manifestation of the topological effect is the existence of robust gapless surface states inside the bulk energy gap. The topological surface states exhibit Dirac-cone-like energy dispersion with strong spin-momentum locking. Potential future applications cover areas such as spintronics, thermoelectrics, quantum computing and beyond.It is remarkable that TIs have been realized in many common materials, without the requirement of extreme conditions such as high magnetic field and low temperature. The first TI was predicted in 2006 and experimentally realized in 2007 in HgTe quantum wells. Soon afterwards, three traditionally well-known binary chalcogenides, Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 , were predicted and observed to be TIs with a large bulk gap and a metallic surface state consisting of a single Dirac cone. The discovery of these topological materials opened up the exciting field of topological insulators. Extensive experimental and theoretical efforts are devoted to synthesizing and optimizing samples, characterizing the topological states by surface sensitive spectroscopy, transport measurements, device fabrications, and searching for new material candidates.The field of TIs is now expanding at a rapid pace in the communities of physics, chemistry and materials science. In this Focus Issue, we intend to present a highquality snapshot of the materials and applications aspect of this field.We present ten Review papers from both experiment and theory aspects. Five experimental papers [1][2][3][4][5] We present ten Letters that cover various aspects, ranging from ARPES, transport measurement and devices, thin film growth to first-principles simulations and fundamental theory. Letters on ARPES [11][12][13][14] [18] shows the dependence of edge state dispersion on edge geometry of graphene. Last but not the least, two papers on phenomenological models [19,20] report the maximally localized flat-band Hamiltonians and the spectra flow for Aharonov-Bohm rings, respectively.We hope that this Focus Issue will be helpful for your research and stimulate more activity in the exciting field of topological insulators.

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“…Leaping to present content, a Focus Issue on Topological Insulators -From Materials Design to Reality [1] with Guest Editors Claudia Felser, Shoucheng Zhang, and Binghai Yan will kick-off Volume 7 of the journal pss (RRL). Nine Review@ RRL overview articles on various aspects of this vibrating and quickly expanding fi eld cover, for example, nanostructures [2] and the connection between topological insulators and thermoelectric materials [3]. They are complemented by a similar number of Rapid Research Letter contributions with brand new results.…”

mentioning

confidence: 99%

NEWS from pss in 2013

Bahrs¹,

Stass²,

Hildebrandt³

2013

Physica Status Solidi (b)

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Topological insulator nanostructures

Cited by 76 publications

References 112 publications

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Topological Insulators – From Materials Design to Reality

NEWS from pss in 2013

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Topological insulator nanostructures

Cited by 76 publications

References 112 publications

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

Topological Insulators – From Materials Design to Reality

NEWS from pss in 2013

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Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)