Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Abstract

Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi 2 Se 3 nanowire formation from deposited flakes using ion beam milling method. The fabricated Bi 2 Se 3 nanowire devices have been employed to investigate the robustness of topological surface state (TSS) to gallium ion doping and any deformation in the material due to fabrication tools. We report the quantum oscillations in magnetoresistance curves under the parallel magnetic field. The resistance versus magnetic field curves have been studied and compared with Aharonov-Bohm (AB) interference effects which further demonstrate the transport through TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations and can be exploited further in studying the exotic electronic properties associated with TI based nanodevices.

Size effect in the electronic transport of thin films of Bi2Se3

“…σ0 bulk also decreases with T as it was observed for Bi2Se3 in Ref. [6] since Bi2Se3 has relatively small gap in its electron energy spectrum at Fermi level. It leads to that fact the scattering of charge carriers begin to play the main role in formation of its conductivity.…”

“…It is known that Bi2Se3 compound is the TI [4,5] with a metallic conductivity near surface and the gapless semiconductive one [6] in its bulk. Since the electroconductivity value in a bulk and near surface of such materials can differ substantially, it is of interest to "divide" them experimentally.…”

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions

“…Huang et al . observed that transport through TSS can tolerate the surface oxidation and molecules absorbed on the samples surface 40 and our previous work also showed the robustness of TSS towards the Ga ion milling and inherent material deformations 26 , 41 .…”

3D Flake‐Like Bi2Te3 with Outstanding Lightweight Electromagnetic Wave Absorption Feature

“…Currently, Bi 2 Te 3 insulator material is generally produced by mechanical exfoliation and molecular beam epitaxy . Meanwhile, Bi 2 Te 3 thin films could be prepared by pulsed‐laser deposition, and Bi 2 Te 3 nanowires could be fabricated by the focused Ion beam method . However, those growth methods are not simple enough but difficult and great cost, thus it is difficult to industrialize in the microwave absorbing filed.…”