Topographic evolution during deposition of plasma-deposited hydrogenated silicon on glass

Dalakos, George T.; Plawsky, Joel; Persans, P. D.

doi:10.1103/physrevb.72.205305

Cited by 22 publications

(22 citation statements)

References 27 publications

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“…Dalakos et al 35 analyzed a-Si:H films grown by plasma deposition and have shown by means of power spectral density plots that such films have a cauliflower like morphology and a two-scale roughness. The deposited oxide surface used here also has a similar morphology and exhibits a two-scale roughness that includes ͑a͒ large clusters ͑average size ϳ1000 nm͒ and ͑b͒ small nuclei ͑average size ϳ60 nm͒.…”

Section: Resultsmentioning

confidence: 98%

Role of solid surface structure on evaporative phase change from a completely wetting corner meniscus

et al. 2010

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The transport processes that occur at small length scales are greatly influenced by interfacial and intermolecular forces. Surface roughness at the nanoscale generates additional intermolecular interactions that arise due to the increased surface area. In this work, we have experimentally studied how the magnitude as well as the shape of surface roughness influences the microscale transport processes that occur in the contact line region of a liquid corner meniscus. The surface roughness contribution to the interaction potential was calculated and a direct relationship between the wetting properties of the liquid and the underlying surface properties was obtained. Since the underlying roughness alters the surface potential, the shape of the meniscus and in turn, the resulting capillary and disjoining pressure forces also changed. Atomic force microscopy was utilized to obtain a detailed characterization of the shape of the prepared surfaces. Surface morphology features were obtained from a height-height correlation function. These features were related to the wetting and transport properties of the meniscus at the contact line. Finally, the modified capillary and disjoining pressure forces on the structured surfaces were observed to influence the evaporative heat transfer from the corner meniscus.

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Section: Resultsmentioning

confidence: 98%

Role of solid surface structure on evaporative phase change from a completely wetting corner meniscus

et al. 2010

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“…16 Such an approach has been successfully applied for thin films grown by evaporation, 18 sputtering, 19 thermal CVD, 35 or PECVD. 20,21,24 Here, besides applying this methodology, we will try to correlate the obtained information with the porosity and microstructure of the films.…”

Section: B Analysis Of Roughness Evolution With Thicknessmentioning

confidence: 99%

“…The evolution of the roughness ͑␣͒ and growth ͑␤͒ exponents deduced from this analysis provides information about the influence of the different surface processes controlling the thin film growth ͑surface diffusion, surface reactivity, shadowing effects, etc.͒ and, therefore, in the shaping of the surface morphology. [18][19][20][21] Roughness evolution of films prepared by plasma deposition usually behave in an "anomalous" way with regard to the values of roughness and growth exponents ͑i.e., these exponents do not follow the basic Family-Vicsec relation that holds for a "normal" scaling behavior of surface evolution 22,23 ͒. As evidenced for SiO 2 and SiO x Cy films prepared by PECVD, a factor that contributes to the appearance of such an "anomalous" behavior in plasma films is the fact that species coming from the plasma may reach the surface under off-diagonal directions.…”

Section: Introductionmentioning

confidence: 99%

Relationship between scaling behavior and porosity of plasma-depositedTiO2thin films

et al. 2007

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The growth of TiO 2 thin films prepared by plasma enhanced chemical vapor deposition has been studied by analyzing their roughness with the concepts of the dynamic scaling theory. Differences in the growth and roughness exponents have been found depending on the composition of the plasma by using either O 2 or mixtures Ar+ O 2 as plasma gas and titanium isopropoxide as the precursor. The slope of the representations of the film roughness against the deposition time yielded values of the exponent ␤ of 0.45 and 0.32 for, respectively, thin films prepared with plasmas of O 2 or mixtures Ar+ O 2 . Meanwhile, values of the exponent ␣ of 1.15 and 1.89/0.35 were deduced from the power spectral density representations for the films prepared under these two experimental conditions. These values are congruent with growth processes dominated, respectively, by shadowing or diffusion processes. A columnar microstructure was observed by scanning electron microscopy for the thin films prepared with pure oxygen. Meanwhile, homogeneous films were obtained with mixtures of Ar+ O 2 . The open porosity of the films was determined by measuring water adsorption-desorption isotherms with a quartz crystal monitor. This analysis showed that in the samples prepared with mixtures of Ar+ O 2 the porosity consisted exclusively of micropores ͑d Ͻ 2 nm͒, while in the films prepared with an oxygen plasma there were micro-and meso-pores ͑d Ͼ 2 nm͒. It is concluded that the different growth mechanisms found by just changing the chemistry of the plasma are responsible for the quite distinct microstructures, porosities, and optical properties obtained for the films.

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“…z equals α/β. Such a scaling behavior holds well for thin films synthesized by techniques like evaporation [4], sputtering [5], thermal chemical vapor deposition (CVD) [6] and PECVD [7].…”

Section: Introductionmentioning

confidence: 79%

Growth kinetics of ion beam sputtered Al-thin films by dynamic scaling theory

et al. 2014

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This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films.Dynamic scaling theory was used to derive the kinetics from AFM measurements. AFM imaging revealed that surface incorporates distinctly different morphologies. Variation in deposition times resulted in such distinctiveness. The growth governing static (α) as well as dynamic (β) scaling exponents have been determined. The exponent α decreased as the deposition time increased from 3 to 15 minutes. Consequently, the interfacial width (ξ) also decreased with critical length (L c ), accompanied with an increase in surface roughness. Surface diffusion becomes a major surface roughening phenomenon that occurs during deposition carried out over a short period of 3 minutes. Extension of deposition time to 15 minutes brought in bulk diffusion process to dominate which eventually led to smoothening of a continuous film.

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Topographic evolution during deposition of plasma-deposited hydrogenated silicon on glass

Cited by 22 publications

References 27 publications

Role of solid surface structure on evaporative phase change from a completely wetting corner meniscus

Role of solid surface structure on evaporative phase change from a completely wetting corner meniscus

Relationship between scaling behavior and porosity of plasma-depositedTiO2thin films

Growth kinetics of ion beam sputtered Al-thin films by dynamic scaling theory

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