Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers

Moon, Junghwan; Curtis, D.; Bui, S.; Marshall, T.; Wheeler, Dana; Valles, Irma; Kim, S; Wang, E; Weng, Xiaojun; Fanton, Mark A.

doi:10.1109/led.2010.2065792

Cited by 31 publications

(29 citation statements)

References 15 publications

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“…Graphene FETs are being developed on the wafer-scale utilizing graphene-on-Si [19,21], graphene-on-SiC [20,[22][23][24], and graphene transferred to SiO2 substrates [25]. Several promising device parameters have been demonstrated.…”

Section: Status Of Epitaxial Graphene-on-sic Transistorsmentioning

confidence: 99%

“…With expected large on-state current density and transconductance per gate capacitance compared to Si, graphene has the potential to offer excellent switching characteristics (capacitance/on-state current) and short-circuit current gain cut-off frequency [18]. Although it is too early to predict, graphene-on-Si FETs [19] could potentially be further developed and processed in a manner compatible with Si complementary MOS (CMOS) with desirable integration density for system-on-chip applications.…”

Section: Introductionmentioning

confidence: 99%

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Graphene field-effect transistor for radio-frequency applications : review

Moon¹

2012

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Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for highperformance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

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Section: Status Of Epitaxial Graphene-on-sic Transistorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Graphene field-effect transistor for radio-frequency applications : review

Moon¹

2012

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“…We applied 2 different chamber pressures (0. 4 Mobility improvement and microwave characterization of a graphene field effect transistor with silicon nitride gate dielectrics Omid Habibpour, Student Member, IEEE, Sergey Cherednichenko, Josip Vukusic and Jan Stake Senior Member, IEEE S Torr and 1 Torr) in order to investigate the effect of the chamber pressure on the silicon nitride-graphene integration process. The layer structure of the device is demonstrated in Fig.…”

Section: Device Fabricationmentioning

confidence: 99%

“…Much of the interest in graphene is due to a very high intrinsic carrier mobility [2], together with the ability to change its carrier density by the field-effect [3][4][5][6][7]. These properties make it a promising material for high speed analog devices such as transistors operating in the terahertz band (0.3-3 THz) [8].…”

Section: Introductionmentioning

confidence: 99%

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

Habibpour

Cherednichenko

Vukušić

et al. 2011

IEEE Electron Device Lett.

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Abstract-We report on the influence of a silicon nitride gate dielectric in graphene based field-effect transistors. The silicon nitride is formed by a plasma-enhanced chemical vapor deposition method. The process is based on a low-density plasma at a high pressure (1 Torr), which results in a low degradation of the graphene lattice during the top-gate formation process. Microwave measurements of the graphene field-effect transistor show a cut-off frequency of 8.8 GHz for a gate length of 1.3 µm. A carrier mobility of 3800 cm 2 /Vs at room temperature was extracted from the DC-characteristic.

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“…This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices [17,18] preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing. Si/graphene integration schemes [19][20][21] where graphene-and Si-device areas are implicitly designed side by side on the same plane. The Si wafer transfer solution described below in detail presents several advantages.…”

mentioning

confidence: 99%

Wafer bonding solution to epitaxial graphene–silicon integration

Dong¹,

Guo²,

Palmer³

et al. 2014

J. Phys. D: Appl. Phys.

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The development of graphene electronics [1,2] requires the integration of graphene devices withSi-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer [3][4][5] and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene [6,7] . Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating)surface, and graphene nanostructures with exceptional properties [8][9][10][11] have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning [9,12,13] .However, the temperatures required in this structured growth process are too high for silicontechnology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) [14][15][16] a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices [17,18] preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.

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Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers

Cited by 31 publications

References 15 publications

Graphene field-effect transistor for radio-frequency applications : review

Graphene field-effect transistor for radio-frequency applications : review

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

Wafer bonding solution to epitaxial graphene–silicon integration

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