Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Peng, Hao; Chang, Biao; Fu, Haishi; Yang, Huan; Zhang, Yuqing; Zhou, Xiaoliang; Lü, Lei; Zhang, Shengdong

doi:10.1109/ted.2020.2975211

Cited by 20 publications

(22 citation statements)

References 33 publications

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“…Consistent with material improvements, pH sensing capability was enhanced, and hysteresis voltage and drift rate were suppressed with the incorporation of Mg doping and NH3 plasma treatment in the membrane fabrication process [ 19 , 20 ]. This study confirms that incorporation of Mg doping and NH3 plasma treatment can work together to optimize membrane material properties and sensing performance [ 21 , 22 ]. Furthermore, based our previous study [ 23 ], appropriate annealing could effective improve the material quality and sensing behaviors.…”

Section: Introductionsupporting

confidence: 76%

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

et al. 2021

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In this study, the effects of magnesium (Mg) doping and Ammonia (NH3) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH3 plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH3 plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings. Results indicate these material improvements increased pH sensing capability significantly. Plasma-treated Mg-doped InGaZnO pH sensing membranes show promise for future pH sensing biosensors.

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Section: Introductionsupporting

confidence: 76%

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

et al. 2021

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“…This is probably due to slight migration of carriers that reside in the metallized S&D region of the a-IGZO lm into the channel region of the a-IGZO lm. Such behaviour is easily observable in other literature as well, 29,35,37 and it is due to the carrier concentration gradient formed inherently between the metallized S&D region and the channel region.…”

Section: Tft Characterizationsupporting

confidence: 58%

“…Recent research proposes metal-induced metallization by using reductive metals such as aluminium (Al), titanium (Ti), and magnesium (Mg). 21,[31][32][33][34][35][36] Highly reductive nature of these metals can be conrmed by standard reduction potential (E ) of metal ions and Gibbs free energy of formation ðG f Þ of metal oxides that are shown in Table 1. Even though those reductive metals are excellent candidates to chemically reduce a-IGZO, they are mostly deposited in rather complex high vacuum environment to prevent unwanted oxidation, and high…”

mentioning

confidence: 99%

Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution

et al. 2022

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“…Although metal films have strong H-blocking capabilities [11], they are not suitable for the hybrid integration structures due to potential problems, such as a short circuit. Previous studies proved that the atomic-layer-deposited (ALD) alumina (AlO X ) was able to weaken H penetration [12][13][14][15][16]. However, the ALD process itself is rich in H and unsuited to large-area applications.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the H-resistant capability of the AOS channel needs fundamental enhancements. The fluorine (F) plasma treatment has been demonstrated to effectively suppress oxygen-related native defects and enhances the H-resilience of a-IGZO [11,14,17]. Given the corrosive effect of F on common dielectrics, a more moderate pretreatment was developed to realize the H-resistant AOS.…”

Section: Introductionmentioning

confidence: 99%

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

et al. 2022

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The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the display’s power consumption. However, the essential hydrogenation of LTPS would seriously deteriorate AOS TFTs by increasing the population of channel defects and carriers. Hydrogen (H) diffusion barriers were comparatively investigated to reduce the H content in amorphous indium–gallium–zinc oxide (a–IGZO). Moreover, the intrinsic H–resistance of a–IGZO was impressively enhanced by plasma treatments, such as fluorine and nitrous oxide. Enabled by the suppressed H conflict, a novel AOS/LTPS integration structure was tested by directly stacking the H–resistant a–IGZO on poly–Si TFT, dubbed metal–oxide–on–Si (MOOS). The noticeably shrunken layout footprint could support much higher resolution and pixel density for next–generation displays, especially AR and VR displays. Compared to the conventional LTPO circuits, the more compact MOOS circuits exhibited similar characteristics.

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Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Cited by 20 publications

References 33 publications

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

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