2011
DOI: 10.1149/1.3571972
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Top-Down Processed SOI Nanowire Devices for Biomedical Applications

Abstract: We present silicon nanowire (SiNW) devices, which were fabricated in a top-down process from silicon-on-insulator (SOI) substrates with a high yield. Electronic characterization proved reliable electronic properties. Here we report the versatile use of the devices in different applications like label-free sensing of DNA hybridization, electronic detection of cellular signals, and detection of proteins. Compared to micro-sized devices, the SiNWs show an improved sensitivity. Analyses of the electronic cell-nano… Show more

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Cited by 18 publications
(10 citation statements)
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“…These spectra make the devices comparable to other silicon-based transistor devices used earlier in our group (Ingebrandt et al 2011;Susloparova et al 2013). Figure 1 shows the plot of the TC (Fig.…”
Section: Characterization Of the Devicessupporting
confidence: 53%
“…These spectra make the devices comparable to other silicon-based transistor devices used earlier in our group (Ingebrandt et al 2011;Susloparova et al 2013). Figure 1 shows the plot of the TC (Fig.…”
Section: Characterization Of the Devicessupporting
confidence: 53%
“…Glycidoxypropyltrimethoxysilane (GOPMS) with a reactive epoxy end group is used to attach amine-terminated strands of the thrombin-binding aptamer TBA (3 -GGTTGGTGTGGTTGG-T 6 -(CH 2 ) 6 -NH 2 -5 ) via stable amino-alcohol bond formation, as sketched in Figure 2c. GOPMS covalently links to the Al 2 O 3 layer via gas phase adsorption at elevated temperatures as described elsewhere [46]. We confirmed the binding using contact angle measurement (Contact Angle System OCA, DataPhysics, Filderstadt, Germany), dripping a water droplet on the Si-wafer as a control, indicating a homogeneously covered sample with a mean contact angle of 64 degrees compared to 36 degrees for the bare oxide.…”
Section: Methodssupporting
confidence: 60%
“…At the same time, non-specific adsorption of fully mismatched ssDNAs induces only a small potential shift of less than 5 mV. The hybridization signals detected by the MLAPS functionalized with a PAH/DNA LbL layer were about 5 times higher than that of the capacitive EIS sensor 38 or floating-gate transis- tor structure 47 modified with a poly-L-lysine/DNA LbL layer and comparable to hybridization signals recorded by the MLAPS, 44 capacitive EIS sensors 57 and silicon nanowires 58 with probe ssDNAs covalently attached to the silanized SiO 2 gate surface. In general, the hybridization signal was smaller than the immobilization signal.…”
Section: Label-free Detection Of Dna Hybridizationmentioning
confidence: 60%