Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Wang, Runsheng; Guo, Shaofeng; Zhang, Zhe; Wang, Qingxue; Wu, Dehuang; Wang, Joddy; Huang, Ru

doi:10.1109/iedm.2018.8614594

Cited by 25 publications

(37 citation statements)

References 3 publications

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“…Our result also shows that ΔID/ID0 are larger around threshold region and reduce towards the operating region. This agrees well with the 3D atomic simulation results by assuming different distances between individual traps in the dielectric and the percolation path in the channel induced by the non-uniform doping [23]. Since the standard RTN test measures ΔID/ID0 close to threshold region, this result suggests that the time-dependent variation could be overestimated [24].…”

Section: Applications To Rtn Study In Nano-scaled Devicesupporting

confidence: 86%

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Zhan

Shen

et al. 2019

IEEE Electron Device Lett.

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A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n-and p-FETs.

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Section: Applications To Rtn Study In Nano-scaled Devicesupporting

confidence: 86%

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Zhan

Shen

et al. 2019

IEEE Electron Device Lett.

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“…To take RTN into account when optimizing circuit design, substantial efforts have been made to model RTN [6]- [11]. For dynamic Monte Carlo modelling, one needs the statistical distributions of the number of traps per device, the amplitude of RTN per trap, and the capture/emission time (CET) of traps [3], [11], [12]. Early works [9], [13] have focused their attentions on the amplitude distributions and the CET distribution has been rarely reported based on test data [1], [14]- [17].…”

Section: Introductionmentioning

confidence: 99%

“…Although this raises the number of traps analyzable from one device, it becomes increasingly difficult to apply as the number of traps in a device increases with time window. Although it is generally believed that there is no clear uplimit for CETs [1], [3], [12], [21], the time window used in early works is often limited, e.g. 10 sec or less [14], [17], partially to control the number of active traps and partially for test convenience.…”

Section: Introductionmentioning

confidence: 99%

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An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants

et al. 2020

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As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important. To optimize circuit design, one needs assessing the impact of RTN on the circuit and this can only be accomplished if there is an accurate statistical model of RTN. The dynamic Monte Carlo modelling requires the statistical distribution functions of both the amplitude and the capture/emission time (CET) of traps. Early works were focused on the amplitude distribution and the experimental data of CETs were typically too limited to establish their statistical distribution reliably. In particular, the time window used has been often small, e.g. 10 sec or less, so that there are few data on slow traps. It is not known whether the CET distribution extracted from such a limited time window can be used to predict the RTN beyond the test time window. The objectives of this work are three fold: to provide the long term RTN data and use them to test the CET distributions proposed by early works; to propose a methodology for characterizing the CET distribution for a fabrication process efficiently; and, for the first time, to verify the long term prediction capability of a CET distribution beyond the time window used for its extraction.

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“…The instabilities of modern MOSFETs have a number of sources: bias temperature instabilities (BTI) [1][2][3][4][5][6][7], hot carrier ageing (HCA) [8][9][10], and random telegraph noise [11][12][13][14][15][16][17]. To increase the instabilities and make them measurable, it is a common practice to use voltage-acceleration [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

An assessment of RTN-induced threshold voltage jitter

Zhang

Manut

Gao

et al. 2019

2019 IEEE 13th International Conference on ASIC (ASICON)

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Power consumption is a key issue especially for the edge devices/units in an IoT system. Lowering operation voltage is an effective way to reduce power. As the overdrive voltage, Vg-Vth, becomes smaller, the device is more vulnerable to threshold voltage jitters. One source for the jitter is Random Telegraph Noises (RTN), which cause a fluctuation in both drain current, ΔId, and threshold voltage, ΔVth. Early works on RTN were focused on measuring ΔId and then evaluate ΔVth from ΔId/gm, where gm is transconductance. The accuracy of ΔVth obtained in this way is not known. The objective of this work is to assess its accuracy by comparing it with the ΔVth directly measured from pulse Id-Vg. It will be shown that the correlation between these two is poor, so that ΔVth must not be evaluated from ΔId/gm. This is caused by the device-specific localized current distribution near the threshold.

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Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Cited by 25 publications

References 3 publications

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants

An assessment of RTN-induced threshold voltage jitter

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Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Cited by 25 publications

References 3 publications

A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants

An assessment of RTN-induced threshold voltage jitter

Contact Info

Product

Resources

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A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition