TOF study of pulsed-laser ablation of aluminum nitride for thin film growth

Chu, Cynthia T-W.; Ong, P.P.; Chen, H.F; Teo, Hock-Hai

doi:10.1016/s0169-4332(98)00376-6

Cited by 24 publications

(13 citation statements)

References 17 publications

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“…The formation of the Al 10 N 10 cluster often reported in the literature was observed. In addition to the Al 10 N 10 cluster, around the theoretical m/z value of Al 10 N 10 (409.8) we observed several peaks of low intensity at high laser energy (150 a.u.).…”

Section: Resultssupporting

confidence: 58%

“…. We believe that the previously published results were acquired at low resolution (the value is not given in the papers) and thus the authors came to the wrong conclusion about the major formation of Al 10 N 10 .…”

Section: Resultsmentioning

confidence: 93%

“…The formation of clusters of AlN has already been studied, both experimentally and theoretically. Pulsed‐laser ablation of AlN via time‐of‐flight mass spectrometry (TOFMS) and the detection of the Al 10 N 10 – cluster has been reported . From a theoretical chemistry approach, density functional theory (DFT) has been used to study the evolution of structural and electronic properties as a function of the cluster size for the stoichiometric neutral and anionic (medium‐size) Al n N n ( n = 7–16) clusters .…”

mentioning

confidence: 99%

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Formation of aluminium, aluminium nitride and nitrogen clusters via laser ablation of nano aluminium nitride. Laser desorption ionisation and matrix‐assisted laser desorption ionisation time‐of‐flight mass spectrometry

Panyala

Prysiazhnyi

Slavíček

et al. 2011

Rapid Comm Mass Spectrometry

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Laser Desorption Ionisation (LDI) and Matrix-Assisted Laser Desorption Ionisation (MALDI) Time-of-Flight Mass Spectrometry (TOFMS) were used to study the pulsed laser ablation of aluminium nitride (AlN) nano powder. The formation of Al(m)(+) (m=1-3), N(n)(+) (n=4, 5), AlN(n)(+) (n=1-5, 19, 21), Al(m)N(+) (m=2-3), Al(3)N(2)(+), Al(9)N(n)(+) (n=5, 7, 9, 11 and 15), Al(11)N(n)(+) (n=4, 6, 10, 12, 19, 21, 23, and 25), and Al(13)N(n)(+) (n=25, 31, 32, 33, 34, 35, and 36) clusters was detected in positive ion mode. Similarly, Al(m)(-) (m=1-3), AlN(n)(-) (n=1-3, 5), Al(m)N(-) (n=2, 3), Al(2)N(n)(-) (n=2-4, 28, 30), N(n)(-) (n=2, 3), Al(4)N(7)(-) Al(8)N(n)(-) (n=1-6), and Al(13)N(n)(-) (n=9, 18, 20, 22, 24, 26, 28, 33, 35, 37, 39, 41 and 43) clusters were observed in negative ion mode. The formation of the stoichiometric Al(10) N(10) cluster was shown to be of low abundance. On the contrary, the laser ablation of nano-AlN led mainly to the formation of nitrogen-rich Al(m)N(n) clusters in both negative and positive ion mode. The stoichiometry of the Al(m)N(n) clusters was determined via isotopic envelope analysis and computer modelling.

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Section: Resultssupporting

confidence: 58%

Section: Resultsmentioning

confidence: 93%

mentioning

confidence: 99%

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Formation of aluminium, aluminium nitride and nitrogen clusters via laser ablation of nano aluminium nitride. Laser desorption ionisation and matrix‐assisted laser desorption ionisation time‐of‐flight mass spectrometry

Panyala

Prysiazhnyi

Slavíček

et al. 2011

Rapid Comm Mass Spectrometry

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“…These AlN coatings are deposited by many techniques such as molecular beam epitaxy (MBE) [13], ion-beam assisted deposition [14], DC/RF sputtering [15,16], chemical vapor deposition (CVD) [17], and pulsed laser ablation (PLA) [18]. However, high growth temperature is required for CVD while it is difficult for PLD to develop large area films.…”

Section: Introductionmentioning

confidence: 99%

Structure, mechanical and corrosion properties of DC reactive magnetron sputtered aluminum nitride (AlN) hard coatings on mild steel substrates

2008

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Aluminum nitride (AlN) coatings of about 2 lm thick were deposited on mild steel (MS) by means of direct current (DC) reactive magnetron sputtering. AlN coatings were prepared in an Ar + N 2 gas mixture and their crystal structure, microstructure, and topography were analyzed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. XRD revealed that the films are polycrystalline in nature and have a hexagonal wurtzite structure with a predominant peak observed along the (002) plane. SEM and AFM images showed the presence of continuously covered pebble like spherical grains on the surface. These coatings showed lower coefficient of friction and excellent wear resistance compared to the bare MS substrate. The potentiodynamic polarization studies showed lower corrosion current density and higher polarization resistance for the AlN/MS structure than the uncoated MS substrate.

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“…They use both AlN and AlN-based ceramics to manufacture enclosures for highpower transistors and other semiconductor devices, thermally stressed single-crystal modules, *Corresponding author. Email: yurasova@ph-elec.phys.msu.ru multilayer switching cards, optoelectronic, light-emitting, microwave and heat-liberating devices of broad utility [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Features of sputtering of nitrides and their components

Mosunov

Ryzhov

Shkarban

et al. 2007

Radiation Effects and Defects in Solids

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The sputtering behaviour of hexagonal or wurtzite polycrystal nitrides of boron, aluminium, and gallium was explored employing methods of molecular dynamics. The sputtering yield Y of nitrides and the average energyĒ 1 of emitted particles were studied as dependent on the mass m 1 of bombarding He, Li, B, N, Ne, Al, Ar, Ni, Ga, Kr, and Xe ions with the initial energy E 0 between 200 and 10,000 eV. Y (m 1 ) andĒ 1 (m 1 ) were researched upon for preferential sputtering of nitride components at low E 0 . It was revealed that the ratio between the sputtering yield of the light component and that of the heavy one depends on ion energy and mass. At E 0 = 200 eV and m 1 = 40, the ratio for BN, AlN, and GaN amounts to 1.2, 2.2, and 2.4, respectively. For nitride components, an anomalous dependence of sputtering on ion mass was found, its maximum occurring at a certain ratio m 2 /m 1 , where m 2 is the averagè mass of two nitride components.

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TOF study of pulsed-laser ablation of aluminum nitride for thin film growth

Cited by 24 publications

References 17 publications

Formation of aluminium, aluminium nitride and nitrogen clusters via laser ablation of nano aluminium nitride. Laser desorption ionisation and matrix‐assisted laser desorption ionisation time‐of‐flight mass spectrometry

Formation of aluminium, aluminium nitride and nitrogen clusters via laser ablation of nano aluminium nitride. Laser desorption ionisation and matrix‐assisted laser desorption ionisation time‐of‐flight mass spectrometry

Structure, mechanical and corrosion properties of DC reactive magnetron sputtered aluminum nitride (AlN) hard coatings on mild steel substrates

Features of sputtering of nitrides and their components

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