To the Kinetics of Nitrogen Incorporation during dc Magnetron Deposition

Abstract

Investigations of nitrogen incorporation during film deposition by dc magnetron sputtering with a CrSiAl target in Ar/N, mixtures have been carried out in the range of the metallic mode. The rate of the nitrogen consumption is proportional to the nitrogen partial pressure during deposition and to the amperage. The corresponding rate constant decreases with the argon pressure. Furthermore, the condensation rate of the target species decreases with the nitrogen partial pressure and is determined by the rate constant of the nitrogen consumption. The experimental results are explained by a 4-stepped reaction sequence of nitrogen incorporation consisting in ( I ) ionization, (2) ion bombardment of the target and formation of a coverage by plating, (3) removal of the coverage by the sputter process, (4) condensation on the substrate.

A Linear Model for the Interpretation of Optical Emission Spectroscopy Measurements in Low Pressure DC Magnetron Sputtering

“…To meet the needs of thin film development, the model is also not intended to require detailed information on the electron energy distribution function (EEDF). It still must help to explain the dependences of the rates of formation of excited and ionic species on discharge current and chamber pressure, which is known to be one of the most crucial parameters [18,19]. To evaluate the model presented here, the experiments deal with the well-known sputtering of aluminium with argon and use OES to investigate excitation processes.…”